Global Power Transistors Market Size, Share, Opportunities, And Trends By Type (MOSFET, IGBT, Bipolar Junction Transistor, RF/Microwave Power Transistor and Module), By Industry Vertical (Consumer Electronics, Communication, Automotive, Manufacturing), And By Geography - Forecasts From 2025 To 2030

  • Published : Dec 2024
  • Report Code : KSI061614663
  • Pages : 140
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The global power transistors market is projected to grow at a CAGR of 3.42% between 2025 to 2030.

The power transistor is a three-terminal semiconductor device used to intensify and switch electronic signals and electrical power. It is an intersection transistor designed to deal with high present and power; utilized mostly in sound and exchanging circuits. Their main work is to improve the switch performance and enhance system reliability. Apart from this, these ensure the power efficiency of electronic products ensuring no power loss. Due to their crucial role in power management, they are commonly used in electrical components, and a steady rise in the demand for electrical components around the world will result in an increasing demand for these devices during the forecast period. This research study examines the current market trends related to demand, supply, and sales, in addition to recent developments. Major drivers, restraints, and opportunities have been covered to provide an exhaustive picture of the market. The analysis presents in-depth information regarding the development, trends, and industry policies and regulations implemented in each of the geographical regions. Further, the overall regulatory framework of the market has been exhaustively covered to offer stakeholders a better understanding of the key factors affecting the overall market environment.

Identification of key industry players in the industry and their revenue contribution to the overall business or relevant segment aligned to the study have been covered as a part of competitive intelligence done through extensive secondary research. Various studies and data published by industry associations, analyst reports, investor presentations, press releases and journals among others have been taken into consideration while conducting the secondary research. Both bottom-up and top-down approaches have been utilized to determine the market size of the overall market and key segments. The values obtained are correlated with the primary inputs of the key stakeholders in the global power transistor value chain. The last step involves complete market engineering which includes analyzing the data from different sources and existing proprietary datasets while using various data triangulation methods for market breakdown and forecasting.

Market intelligence is presented in the form of analysis, charts, and graphics to help the clients in gaining a faster and more efficient understanding of the global power transistors market.

Major industry players profiled as part of the report are Vishay Intertechnology, Inc., Infineon Technologies AG, STMicroelectronics, Diodes Incorporated, NXP Semiconductors, Renesas Electronics Corporation, and Mitsubishi Electric Corporation among others.

Segmentation

The power transistors market has been analyzed through the following segments:

  • By Type
    • MOSFET
    • IGBT
    • Bipolar Junction Transistor
    • RF/Microwave Power Transistor and Module
  • By Industry Vertical
    • Consumer Electronics
    • Communication
    • Automotive
    • Manufacturing
  • By Geography
    • North America
      • USA
      • Canada
      • Mexico
    • South America
      • Brazil
      • Argentina
      • Others
    • Europe
      • Germany
      • France
      • United Kingdom
      • Others
    • Middle East and Africa
      • Israel
      • South Africa
      • Others
    • Asia Pacific
      • China
      • Japan
      • South Korea
      • India
      • Others
1. INTRODUCTION
1.1. Market Overview
1.2. Market Definition
1.3. Scope of the Study
1.4. Currency
1.5. Assumptions
1.6. Base, and Forecast Years Timeline
 
2. RESEARCH METHODOLOGY
2.1. Research Design
2.2. Secondary Sources
 
3. EXECUTIVE SUMMARY
 
4. MARKET DYNAMICS
4.1. Market Segmentation
4.2. Market Drivers
4.3. Market Restraints
4.4. Market Opportunities
4.5. Porter’s Five Forces Analysis
4.5.1. Bargaining Power of Suppliers
4.5.2. Bargaining Power of Buyers
4.5.3. Threat of New Entrants
4.5.4. Threat of Substitutes
4.5.5. Competitive Rivalry in the Industry
4.6.  Life Cycle Analysis - Regional Snapshot
4.7. Market Attractiveness
 
5. POWER TRANSISTORS MARKET BY TYPE
5.1. MOSFET
5.2. IGBT
5.3. Bipolar Junction Transistor
5.4. RF/Microwave Power Transistor and Module
 
6. POWER TRANSISTORS MARKET BY INDUSTRY VERTICAL
6.1. Consumer Electronics
6.2. Communication
6.3. Automotive
6.4. Manufacturing
 
7. POWER TRANSISTORS MARKET BY GEOGRAPHY
7.1. Americas
7.1.1. USA
7.1.2. Canada
7.1.3. Brazil
7.1.4. Others
7.2. Europe Middle East and Africa
7.2.1. Germany
7.2.2. France
7.2.3. United Kingdom
7.2.4. Italy
7.2.5. Others 
7.3. Asia Pacific
7.3.1. China
7.3.2. Japan
7.3.3. India
7.3.4. South Korea
7.3.5. Others 
 
8. COMPETITIVE INTELLIGENCE
8.1. Market Positioning Matrix and Ranking
8.2. Recent Investments and Deals
8.3. Strategies of Key Players
 
9. COMPANY PROFILES 
9.1. Semiconductor Components Industries, LLC
9.2. Vishay Intertechnology, Inc.
9.3. Infineon Technologies AG
9.4. STMicroelectronics
9.5. ROHM Co., Ltd.
9.6. Mitsubishi Electric Corporation
9.7. Diodes Incorporated
9.8. Toshiba Electronic Devices & Storage Corporation
9.9. Renesas Electronics Corporation
9.10. NXP Semiconductors
 

Semiconductor Components Industries, LLC

Vishay Intertechnology, Inc.

Infineon Technologies AG

STMicroelectronics

ROHM Co., Ltd.

Mitsubishi Electric Corporation

Diodes Incorporated

Toshiba Electronic Devices & Storage Corporation

Renesas Electronics Corporation

NXP Semiconductors