1. EXECUTIVE SUMMARY
2. MARKET SNAPSHOT
2.1. Market Overview
2.2. Market Definition
2.3. Scope of the Study
2.4. Market Segmentation
3. BUSINESS LANDSCAPE
3.1. Market Drivers
3.2. Market Restraints
3.3. Market Opportunities
3.4. Porter’s Five Forces Analysis
3.5. Industry Value Chain Analysis
3.6. Policies and Regulations
3.7. Strategic Recommendations
4. TECHNOLOGICAL OUTLOOK
5. EMERGING NON-VOLATILE MEMORY MARKET BY TYPE
5.1. Introduction
5.2. Magneto resistive Random Access Memory (MRAM)
5.3. Spin-Transfer Torque Random Access Memory (STT-RAM)
5.4. Ferroelectric Random Access Memory (FeRAM)
5.5. Resistive Random Access Memory (ReRAM)
5.6. 3D NAND
5.7. Others
6. EMERGING NON-VOLATILE MEMORY MARKET BY END-USER
6.1. Introduction
6.2. Automotive
6.3. Consumer Electronics
6.4. IT & Telecommunication
6.5. BFSI
6.6. Healthcare
6.7. Others
7. EMERGING NON-VOLATILE MEMORY MARKET BY GEOGRAPHY
7.1. Introduction
7.2. North America
7.2.1. USA
7.2.2. Canada
7.2.3. Mexico
7.3. South America
7.3.1. Brazil
7.3.2. Argentina
7.3.3. Others
7.4. Europe
7.4.1. United Kingdom
7.4.2. Germany
7.4.3. France
7.4.4. Spain
7.4.5. Others
7.5. Middle East & Africa
7.5.1. Saudi Arabia
7.5.2. UAE
7.5.3. Others
7.6. Asia Pacific
7.6.1. Japan
7.6.2. China
7.6.3. India
7.6.4. South Korea
7.6.5. Australia
7.6.6. Others
8. COMPETITIVE ENVIRONMENT AND ANALYSIS
8.1. Major Players and Strategy Analysis
8.2. Market Share Analysis
8.3. Mergers, Acquisitions, Agreements, and Collaborations
8.4. Competitive Dashboard
9. COMPANY PROFILES
9.1. TSMC
9.2. Fujitsu Ltd
9.3. Infineon Technologies
9.4. Intel Corporation
9.5. CrossBar Inc
9.6. Renesas Electronics
9.7. Everspin Technologies
9.8. Micron Technology
9.9. Samsung Electronics
9.10. STMicroelectronics
10. APPENDIX
10.1. Currency
10.2. Assumptions
10.3. Base and Forecast Years Timeline
10.4. Key benefits for the stakeholders
10.5. Research Methodology
10.6. Abbreviations
LIST OF FIGURES
LIST OF TABLES