1. EXECUTIVE SUMMARY
2. MARKET SNAPSHOT
2.1. Market Overview
2.2. Market Definition
2.3. Scope of the Study
2.4. Market Segmentation
3. BUSINESS LANDSCAPE
3.1. Market Drivers
3.2. Market Restraints
3.3. Market Opportunities
3.4. Porter’s Five Forces Analysis
3.5. Industry Value Chain Analysis
3.6. Policies and Regulations
3.7. Strategic Recommendations
4. TECHNOLOGICAL OUTLOOK
5. DISCRETE IGBT MARKET BY POWER RATING
5.1. Introduction
5.2. High-Power Discrete IGBTs
5.3. Medium-Power Discrete IGBTs
5.4. Low-Power Discrete IGBTs
6. Discrete IGBT Market by END-USER
6.1. Introduction
6.2. Energy & Power
6.3. Automotive
6.4. Consumer Electronics
6.5. Others
7. Discrete IGBT Market BY GEOGRAPHY
7.1. Introduction
7.2. North America
7.2.1. USA
7.2.2. Canada
7.2.3. Mexico
7.3. South America
7.3.1. Brazil
7.3.2. Argentina
7.3.3. Others
7.4. Europe
7.4.1. United Kingdom
7.4.2. Germany
7.4.3. France
7.4.4. Italy
7.4.5. Spain
7.4.6. Others
7.5. Middle East and Africa
7.5.1. Saudi Arabia
7.5.2. UAE
7.5.3. Others
7.6. Asia Pacific
7.6.1. China
7.6.2. Japan
7.6.3. India
7.6.4. South Korea
7.6.5. Taiwan
7.6.6. Thailand
7.6.7. Indosneisa
7.6.8. Others
8. COMPETITIVE ENVIRONMENT AND ANALYSIS
8.1. Major Players and Strategy Analysis
8.2. Market Share Analysis
8.3. Mergers, Acquisitions, Agreements, and Collaborations
8.4. Competitive Dashboard
9. COMPANY PROFILES
9.1. Infineon Technologies AG
9.2. Mitsubishi Electric Corporation
9.3. Fuji Electric Co., Ltd.
9.4. Toshiba Electronic Devices & Storage Corporation
9.5. Semiconductor Components Industries, LLC
9.6. STMicroelectronics N.V.
9.7. Nexperia
9.8. Renesas Electronics Corporation
9.9. Hitachi Energy Ltd.
9.10. Vishay Intertechnology Inc.
10. APPENDIX
10.1. Currency
10.2. Assumptions
10.3. Base and Forecast Years Timeline
10.4. Key benefits for the stakeholders
10.5. Research Methodology
10.6. Abbreviations