Discrete IGBT Market Size, Share, Opportunities, COVID-19 Impact, And Trends By Power Rate (High Power, Medium Power, Low Power), By End-User (Consumer Electronics, Automotives, Others), And By Geography - Forecasts From 2023 To 2028
- Published : Feb 2023
- Report Code : KSI061614306
- Pages : 135
A three-terminal power semiconductor device known as an insulated gate bipolar transistor (IGBT) is used as an electronic switch to provide fast switching with excellent precision. It's also utilized in high-powered applications such as light ballasts, variable-speed freezers, trains, electric automobiles, air conditioners, and arc-welding equipment. It is also regarded as a minority carrier device, allowing for quick switching rates and more efficiency.
A discrete semiconductor with a bipolar junction transistor (BJT) output and a MOSFET input is an insulated gate bipolar transistor (IGBT). It improves energy saving by facilitating power control in a variety of industries such as industrial facilities, consumer devices, and electric vehicles. It is a monolithic mix of a MOSFET and a Bipolar Junction Transistor (BJT). As a result, the device is appropriate for applications that require both high current and large voltage outputs.
It is used to improve switching speed and avoid power outages in renewable energy and electric cars. The construction of an IGBT ensures a positive temperature coefficient, which in high-power applications both increases device longevity and reduces power consumption.
The increasing product launches by companies will expand the market share during the projected period.
The increasing product launches by companies will boost the market demand in the long run. For instance, in November 2020, for the first time in Korea, KEC launched the Gate Driver IC and IGBT solution coupled with Bootstrap Diode. For Gate Driver ICs, key domestic home appliance manufacturers have adopted certain foreign-made semiconductors. KEC, on the other hand, offered a solution that met the specifications for a new fridge model of a prominent domestic home appliance firm that even top overseas semiconductor companies could not fulfill. KEC demonstrated the BSD built-in gate driver IC's quality and features and provided an external TSD (Thermal Shut Down) circuit and an acceptable IGBT without NTC (Negative Temperature Coefficient of Resistance).
Moreover, in August 2022, Bourns stated that their new trench-gate, ground technology IGBTs would provide market-leading efficiency, as well as consistent supply and shorter lead times. Bourns revealed its new BID collection of five high-efficiency 600 and 650 V discrete IGBTs. Bourns created the new devices, which are co-packaged using fast recovery diodes (FRD), utilizing sophisticated trench-gate, field-stop technology, which allows for improved control of dynamic characteristics, according to the company.
The rising demand from the automotive industry will surge the market growth.
Due to the high adoption of electric vehicles and the increasing automotive industry, the market for discrete IGBT is anticipated to rise. Therefore, there are several products in the market that are highly being used by the automotive industry which is generating market sales. For instance, the AIKQ200N75CP2 automobile IGBT discrete is offered by Infineon Technologies AG, a German semiconductor manufacturer. It is an EDT2 IGBT with a co-packed diode in a TO247PLUS package. By permitting battery voltages up to 470V and safe quick switching due to enhanced overvoltage margins, the 750V EDT technology increases energy efficiency and cooling requirements for high-voltage vehicle industries. As a result, high-performance inverter systems are possible. The parameter distribution of the EDT2 technology is exceedingly tight, and the thermal coefficient is positive. This allows for simple paralleling operation, increasing system flexibility and energy flexibility. The AIKQ200N75CP2 is a best-in-class discrete IGBT in a TO247PLUS package, with a nominal current of 200 A. This feature minimizes the chance of paralleled devices needed to achieve a specific power class, boosting power density, and lowering total system costs.
The Asia Pacific region holds a significant amount of share during the forecast period.
The market in this region is expected to grow due to aging power transmission infrastructure and considerable expenditures in renewable energy generation. Furthermore, the increasing adoption of EVs and HEVs in these regions in addition to the initiatives taken by the government is projected to fuel market expansion. For instance, FAME India was established to promote the growth and growing adoption of electric and hybrid vehicles in the country. The FAME-II plans, with a budget of US$ 1.3 billion, was introduced in India to support 1 million e-two-wheelers, 0.5 million e-three-wheelers, 55,000 e-passenger vehicles, and 7,000 e-buses. The plan was extended by the government until 2024, as mentioned in the Union Budget 2022-23.
Market Key Developments
- In July 2020, Toshiba Electronic Devices & Storage Corporation expanded its range by introducing a discrete IGBT rated at 1350 V/30 A for household appliances such as IH rice cookers, IH cooking warmers, and microwave ovens that utilize voltage resonance circuits with AC200 V input.
- In March 2022, the EDT2 IGBTs were introduced by Infineon Technologies AG in a TO247PLUS package. The devices are tailored for car discrete traction inverters and add to Infineon's line of automotive discrete high-voltage electronics. The IGBTs meet and surpass the industry benchmark AECQ101 for automobile parts due to their excellent quality. As a result, the devices can greatly improve inverter system performance and dependability.
Discrete IGBT Market Scope:
|Growth Rate||CAGR during the forecast period|
|Forecast Unit (Value)||USD Billion|
|Segments Covered||Power Rate, End-User, And Geography|
|Regions Covered||North America, South America, Europe, Middle East and Africa, Asia Pacific|
|Companies Covered||Infineon Technologies AG, ABB Ltd, ON Semiconductor, Fuji Electric, STMicroelectronics, Renesas Electronics, Mitsubishi Electric Corporation, Diodes Incorporated, Murata Manufacturing Co, Hitachi Ltd|
|Customization Scope||Free report customization with purchase|
The discrete IGBT market has been analyzed through the following segments:
- By Power Rate
- High Power
- Medium Power
- Low Power
- By End-user
- Consumer electronics
- By Geography
- North America
- United States
- South America
- Middle East and Africa
- Saudi Arabia
- Asia Pacific
- South Korea
- North America
1.1. Market Overview
1.2. Market Definition
1.3. Market Segmentation
2. RESEARCH METHODOLOGY
2.1. Research Data
3. EXECUTIVE SUMMARY
3.1. Research Highlights
4. MARKET DYNAMICS
4.1. Market Drivers
4.2. Market Restraints
4.3. Market Opportunities
4.4. Porter’s Five Force Analysis
4.4.1. Bargaining Power of Suppliers
4.4.2. Bargaining Power of Buyers
4.4.3. Threat of New Entrants
4.4.4. Threat of Substitutes
4.4.5. Competitive Rivalry in the Industry
4.5. Industry Value Chain Analysis
5. DISCRETE IGBT MARKET ANALYSIS, BY POWER RATE
5.2. High Power
5.3. Medium Power
5.4. Low Power
6. DISCRETE IGBT MARKET ANALYSIS, BY END-USER
6.2. Consumer electronics
7. DISCRETE IGBT MARKET ANALYSIS, BY GEOGRAPHY
7.2. North America
7.3. South America
7.5. Middle East and Africa
7.5.1. Saudi Arabia
7.6. Asia Pacific
7.6.4. South Korea
8. COMPETITIVE ENVIRONMENT AND ANALYSIS
8.1. Major Players and Strategy Analysis
8.2. Emerging Players and Market Lucrativeness
8.3. Mergers, Acquisitions, Agreements, and Collaborations
8.4. Vendor Competitiveness Matrix
9. COMPANY PROFILES
9.1. Infineon Technologies AG
9.2. ABB Ltd
9.3. ON Semiconductor
9.4. Fuji Electric
9.6. Renesas Electronics
9.7. Mitsubishi Electric Corporation
9.8. Diodes Incorporated.
9.9. Murata Manufacturing Co
9.10. Hitachi Ltd
Infineon Technologies AG
Mitsubishi Electric Corporation
Murata Manufacturing Co
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