Gallium Nitride (GaN)-On-Silicon Market Size, Share, Opportunities And Trends By Wafer Size (150 mm, 200 mm), By Application (LED Lighting, Power Switching Device, RF Electronics), And By Geography - Forecasts From 2025 To 2030

Description

Gallium Nitride (GaN)-On-Silicon Market Size:

Gallium Nitride (GaN)-On-Silicon Market is expected to grow at a 22.59% CAGR, reaching USD 3.191 billion in 2030 from USD 1.152 billion in 2025.

Gallium Nitride on Silicon (GaN-on-Silicon) technology represents a decisive shift in the power and radio frequency (RF) electronics sectors, utilizing the wide bandgap properties of GaN while capitalizing on the mature, high-volume processing capabilities of the silicon semiconductor ecosystem. This heterogeneous integration addresses the performance limits of conventional silicon devices by offering superior breakdown voltage, higher electron mobility, and faster switching speeds. The resulting devices enable smaller form factors, reduced system costs, and significantly enhanced energy efficiency, positioning GaN-on-Silicon as an imperative material system for next-generation power conversion and high-frequency communication architectures.

Market Key Highlights

• The GaN-on-Silicon paradigm leverages existing, depreciated silicon fabrication infrastructure, specifically 150 mm and 200 mm wafer lines, which directly reduces the manufacturing cost-per-die compared to GaN-on-SiC, thus increasing demand for cost-sensitive, high-volume applications like consumer electronics and certain industrial power supplies.
• Regulatory mandates in key geographies, such as the European Union's Ecodesign Directive, compel manufacturers to improve the energy efficiency of products like power converters and industrial motors, establishing a robust, non-negotiable demand floor for highly efficient GaN-on-Silicon power switching devices.
• The transition to larger 200 mm and the planned adoption of 300 mm silicon wafer platforms for GaN epitaxy represents the primary vector for cost reduction, enabling a pathway toward cost parity with high-performance silicon, which is critical for penetrating mass-market segments like Electric Vehicle (EV) on-board chargers and high-density computing.
• Persistent material science and engineering challenges related to lattice and thermal mismatch between GaN and the silicon substrate continue to necessitate complex buffer layers, which is the key technical constraint impeding full yield potential on larger wafers and higher-voltage device performance.
• The proliferation of Artificial Intelligence (AI) data centers, which demand server power platforms up to 10 kW, is directly increasing the demand for GaN power ICs due to their ability to deliver significantly higher power density (over 130 W/in³) and efficiency (over 97%) compared to legacy silicon solutions.

Gallium Nitride (GaN)-On-Silicon Market Analysis

Growth Drivers

The primary factor propelling market expansion is the global, systemic imperative for energy efficiency and miniaturization across electronic systems. The superior characteristics of GaN High Electron Mobility Transistors (HEMTs), specifically their low on-resistance, high switching frequency, and capacity for monolithic integration (GaN-IC), directly enhance power density and reduce energy losses. This technological superiority creates direct demand across several high-volume segments. For instance, the escalating power demands in new Artificial Intelligence (AI) data centers necessitate power supplies capable of 3x the power of traditional servers. GaN-on-Silicon power ICs provide the critical path to achieving the required power density (up to 130 W/in3) and efficiency (over 97%) in compact server footprints, directly substituting legacy silicon components. Simultaneously, the automotive sector's transition to Electric Vehicles (EVs) drives a demand for smaller, lighter, and more efficient on-board chargers (OBCs) and DC-DC converters. GaN-on-Silicon devices enable this weight and size reduction, a critical metric for extending EV range and optimizing thermal management.

Challenges and Opportunities

The market faces significant headwinds, primarily centered on reliability verification and the technical complexities of scaling. While GaN offers performance benefits, the challenge of managing the lattice and thermal mismatch between the GaN epitaxy layer and the silicon substrate remains a key obstacle. This mismatch necessitates complex buffer layer structures, which can impact the manufacturing yield and limit the ultimate voltage-handling capability of the devices. These constraints raise initial component costs and create a temporary barrier to mass adoption in highly reliability-sensitive markets like high-voltage industrial and utility applications.

The core opportunity lies in the transition to larger wafer diameters. Shifting GaN epitaxy from the established 150 mm platform to the high-volume, cost-optimized 200 mm and emerging 300 mm silicon fabs provides a clear trajectory for significantly reducing the cost-per-die. This scalability is the necessary catalyst to achieve cost parity with high-end silicon devices, which will subsequently unlock demand from cost-sensitive consumer electronics, appliance manufacturers, and the broader industrial motor drive segment. A complementary opportunity is the monolithic integration of GaN power and control circuitry (GaN-IC), which substantially reduces component count and parasitic losses at the system level, simplifying design and accelerating its adoption by system architects.

Raw Material and Pricing Analysis

The GaN-on-Silicon device is a physical product, making the raw material and pricing structure critical. The key raw materials include Gallium (Ga) and Nitrogen (N2?), which form the epitaxial layer, and high-quality, large-diameter Silicon (Si) wafers, which serve as the substrate. The pricing dynamics are dominated by two factors: the cost of the Si substrate and the complexity/yield of the epitaxial growth process. The use of silicon is a deliberate cost-reduction strategy, as silicon wafers (especially 200 mm and 300 mm) are mature, high-volume commodities with significantly lower material and processing costs than specialized substrates like Silicon Carbide (SiC) or native GaN. Gallium itself is a specialty metal, and its price stability can be a minor factor, but the primary cost hurdle is the complexity and yield loss associated with growing a high-quality GaN film on a mismatched Si substrate. The cost of the complex buffer layers required to manage strain dictates a high proportion of the epi-wafer cost. As manufacturers refine the epitaxial growth techniques to enable high-yield 200 mm and 300 mm production, the pricing will trend down rapidly, which is essential to drive mass-market demand.

Supply Chain Analysis

The GaN-on-Silicon supply chain is organized around a dual-track model: the traditional Integrated Device Manufacturers (IDMs) and the fabless/foundry model. The key production hubs are globally distributed, leveraging existing silicon manufacturing clusters in Asia-Pacific (especially China, Japan, and South Korea), North America, and Europe. A critical logistical complexity is the dependency on a specialized group of equipment and material suppliers for Metal-Organic Chemical Vapor Deposition (MOCVD) reactors and the proprietary precursor chemicals and GaN-on-Si epiwafers. This creates chokepoints, particularly as manufacturers transition to larger 200 mm/300 mm platforms, requiring significant capital expenditure and re-tooling by both the GaN device makers and the equipment vendors. The supply chain for the underlying silicon substrate is mature and robust, but the downstream packaging and testing of GaN devices—which often use advanced, low-inductance packaging techniques—remain a dependency requiring specialized assembly capabilities.

Government Regulations

Government regulations are acting as a direct demand lever, primarily by mandating minimum efficiency standards.

In-Depth Segment Analysis

By Application: Power Switching Device

The demand for GaN-on-Silicon in the power switching device segment is driven by the intrinsic physical advantages of the material over silicon, particularly the ability to operate at higher voltages and temperatures while switching at substantially higher frequencies. This high-frequency operation is the critical demand catalyst. In data center and telecommunications power supplies, faster switching allows designers to use smaller, lighter passive components (inductors, capacitors) in the power conversion stage. This shrinks the size and weight of the power supply unit (PSU) by up to 50% and improves its efficiency, directly addressing the space and energy consumption constraints endemic to modern data infrastructure. Furthermore, the push for smaller, faster charging consumer electronics, such as fast chargers for laptops and smartphones, relies entirely on the high-power density enabled by GaN-on-Silicon power switching devices. The demand, therefore, is not merely for a better transistor but for the system-level advantages—size, weight, and energy savings—that the GaN device uniquely facilitates.

By End-User: 200 mm Wafer Size

The 200 mm wafer size (8-inch) is a critical inflection point in the GaN-on-Silicon market, as it marks the true convergence with mature silicon manufacturing economics. The demand for 200 mm GaN-on-Silicon epiwafers is exclusively cost-driven. Moving from 150 mm (6-inch) to 200 mm increases the usable die area by approximately 78%. Since wafer processing steps (lithography, etching, etc.) are performed simultaneously across the entire wafer, this size increase yields a significant reduction in the processing cost per individual die. This economy of scale is paramount for enabling GaN to penetrate high-volume, highly cost-competitive markets like mass-market consumer power adapters and basic industrial power supplies, where the price difference between GaN and silicon has historically been a non-starter. The adoption of 200 mm technology, demonstrated by companies like imec and certain manufacturers, signifies industry confidence in mitigating the technical challenges of epitaxy on a larger, more mechanically stressed substrate, directly linking lower manufacturing cost to higher market demand.

Geographical Analysis

US Market Analysis

The US market is characterized by strong demand from high-reliability and high-performance sectors, driven by government initiatives and the headquarters of major technology firms. Demand is highly concentrated in the data center, telecommunications (5G RF electronics), and defense sectors. The CHIPS Act and subsequent policy emphasis on supply chain security and domestic manufacturing resilience are directly stimulating demand for locally produced GaN-on-Silicon components to secure critical technology supply lines, particularly for applications governed by export controls or national security considerations. This creates a premium demand for domestic and allied-sourced GaN products.

Brazil Market Analysis

The Brazilian market for GaN-on-Silicon is in an emergent phase, with demand primarily stemming from the consumer electronics and renewable energy infrastructure segments. The primary local factor impacting demand is the high cost sensitivity of the consumer base. This makes the cost-reduction trajectory of GaN-on-Silicon, particularly devices produced on large-diameter 200 mm wafers, a critical factor for adoption. Furthermore, investment in solar power generation and grid modernization drives nascent demand for high-efficiency inverters, where GaN-on-Silicon can displace less efficient silicon components to meet new energy grid integration standards.

Germany Market Analysis

Germany, a key hub within Europe, anchors the market demand from the industrial and automotive sectors. The country’s strong engineering base and regulatory environment (influenced by EU Ecodesign directives) create an immediate and substantial demand for GaN-on-Silicon in industrial motor drives, factory automation, and high-end automotive applications like Electric Vehicle (EV) traction inverters and on-board charging systems. The local market prioritizes verifiable long-term reliability and the system-level efficiency gains of GaN, enabling a willingness to absorb a higher initial component cost for superior total cost of ownership.

United Arab Emirates (UAE) Market Analysis

Demand for GaN-on-Silicon in the UAE is intrinsically linked to ambitious national digital and infrastructure development programs. The deployment of advanced 5G/6G communication networks and the construction of next-generation, high-density smart cities are the primary demand catalysts. The high ambient temperatures in the region underscore the need for components with excellent thermal characteristics and high reliability, where GaN's superior properties offer a compelling solution over traditional silicon, specifically driving adoption in telecommunications base station power amplifiers and enterprise-level power supplies.

China Market Analysis

China represents the largest single source of both supply and demand, with its market driven by a state-backed strategic industrial policy. The "Made in China 2025" initiative has directly accelerated domestic capacity and technology adoption across a vast array of applications, from mass-market fast chargers and home appliances to significant investments in 5G infrastructure and Electric Vehicles. The aggressive drive for cost reduction and local supply chain dominance creates intense demand for high-yield, high-volume GaN-on-Silicon wafers, rapidly shifting the focus towards 200 mm and 300 mm production to serve its immense domestic manufacturing base.

Competitive Environment and Analysis

The competitive landscape is characterized by a blend of large, diversified IDMs with deep silicon manufacturing expertise and agile, pure-play GaN companies focused exclusively on epitaxy and device design. Competition centers on cost-per-ampere, switching speed performance, and the maturity of high-volume manufacturing processes on large-diameter silicon substrates. The key strategic battleground is the transition to 200 mm wafers and the successful integration of monolithic GaN-IC solutions.

Infineon Technologies

Infineon Technologies, a global Integrated Device Manufacturer (IDM), leverages its extensive experience in silicon power electronics and its robust manufacturing footprint to solidify its position in the GaN-on-Silicon market. The company pursues a full-spectrum material strategy, mastering silicon (Si), Silicon Carbide (SiC), and GaN. Infineon's strategy is to integrate GaN into its comprehensive power solutions portfolio, targeting automotive, industrial, and consumer markets. A key verified strategic step is its advancement of GaN manufacturing on 300-millimeter wafers, which is on track to enable cost parity for comparable silicon and GaN products, a strategic move to penetrate high-volume, cost-sensitive applications.

Navitas Semiconductor

Navitas Semiconductor operates as a pure-play, next-generation power semiconductor company focused exclusively on Gallium Nitride (GaN) power ICs. The company's core strategic positioning is the monolithic integration of GaN power, drive, control, sensing, and protection circuitry into a single GaNFast™ power IC. This highly integrated approach simplifies the design-in process for customers and maximizes the system-level benefits of GaN. Navitas’s key products, such as their GaNFast™ ICs, are specifically targeted at the high-growth markets of mobile fast chargers, data centers, and EV applications, where they offer best-in-class power density and efficiency.

ALLOS Semiconductors

ALLOS Semiconductors is a GaN-on-Silicon epiwafer technology licensing company focused on micro-LED and power applications. Its strategic focus is on solving the fundamental material science challenges of large-diameter GaN epitaxy on silicon. The company does not manufacture final devices but licenses its proprietary GaN-on-Si technologies, such as their GaN.finity platform, which is designed to achieve leading uniformity and crystal quality on 200 mm and 300 mm silicon wafers. This focus enables its partners, including innovative start-ups and semiconductor giants, to utilize standard silicon processing fabs for high-yield manufacturing, particularly crucial for the emerging micro-LED display segment.

Recent Market Developments

• July 2025: Infineon Advances on 300-Millimeter GaN Manufacturing Roadmap

Infineon Technologies announced that its scalable GaN manufacturing on 300-millimeter wafers is on track, with first samples becoming available for customers in the fourth quarter of 2025. This development signifies a major capacity and technology addition, leveraging the cost advantages of the largest standard silicon wafer size to solidify the company's position as a leading IDM in the GaN market and accelerate the movement toward cost parity with comparable silicon products.

• March 2024: Navitas Semiconductor Announces AI Data Center Technology Roadmap

Navitas Semiconductor announced their AI data center technology roadmap, developing server power platforms to increase from 3 kW up to 10 kW by the end of 2024 to support the exponential power requirements of next-generation AI processors. This product development and capacity expansion targets the dramatic increase in power density and efficiency needed for AI data centers, with Navitas launching a 4.5 kW platform utilizing GaN and SiC to push densities over 130 W/in3.

Gallium Nitride (GaN)-On-Silicon Market Segmentation

• By Wafer Size
• 150 mm
• 200 mm
• By Application
• LED Lighting
• Power Switching Device
• RF Electronics
• By Geography
• North America (USA, Canada, Mexico)
• South America (Brazil, Argentina, Others)
• Europe (Germany, France, United Kingdom, Spain, Others)
• Middle East and Africa (Saudi Arabia, UAE, Others)
• Asia Pacific (China, India, Japan, South Korea, Indonesia, Thailand, Others)

Table Of Contents

1. EXECUTIVE SUMMARY 

2. MARKET SNAPSHOT

2.1. Market Overview

2.2. Market Definition

2.3. Scope of the Study

2.4. Market Segmentation

3. BUSINESS LANDSCAPE 

3.1. Market Drivers

3.2. Market Restraints

3.3. Market Opportunities 

3.4. Porter’s Five Forces Analysis

3.5. Industry Value Chain Analysis

3.6. Policies and Regulations 

3.7. Strategic Recommendations 

4. TECHNOLOGICAL OUTLOOK

5. GALLIUM NITRIDE (GAN)-ON-SILICON MARKET BY WAFER SIZE

5.1. Introduction

5.2. 150 mm

5.3. 200 mm

6. GALLIUM NITRIDE (GAN)-ON-SILICON MARKET BY APPLICATION

6.1. Introduction

6.2. LED Lighting

6.3. Power Switching Device

6.4. RF Electronics 

7. GALLIUM NITRIDE (GAN)-ON-SILICON MARKET BY GEOGRAPHY

7.1. Introduction

7.2. North America

7.2.1. USA

7.2.2. Canada

7.2.3. Mexico

7.3. South America

7.3.1. Brazil

7.3.2. Argentina

7.3.3. Others

7.4. Europe

7.4.1. Germany

7.4.2. France

7.4.3. United Kingdom

7.4.4. Spain

7.4.5. Others

7.5. Middle East and Africa

7.5.1. Israel

7.5.2. Saudi Arabia

7.5.3. Others

7.6. Asia Pacific

7.6.1. China

7.6.2. Japan

7.6.3. South Korea

7.6.4. India

7.6.5. Others

8. COMPETITIVE ENVIRONMENT AND ANALYSIS

8.1. Major Players and Strategy Analysis

8.2. Market Share Analysis

8.3. Mergers, Acquisitions, Agreements, and Collaborations

8.4. Competitive Dashboard

9. COMPANY PROFILES

9.1. Plessey

9.2. MaCOM

9.3. HOMRAY MATERIAL TECHNOLOGY

9.4. ALLOS Semiconductors

9.5. CoorsTek Inc

9.6. Infineon Technologies

9.7. EPC

9.8. Qorvo

9.9. Wolfspeed

9.10. Navitas Semiconductor 

10. APPENDIX

10.1. Currency

10.2. Assumptions

10.3. Base and Forecast Years Timeline

10.4. Key benefits for the stakeholders

10.5. Research Methodology 

10.6. Abbreviations 

LIST OF FIGURES

LIST OF TABLES

Companies Profiled

Plessey

MaCOM

HOMRAY MATERIAL TECHNOLOGY

ALLOS Semiconductors

CoorsTek Inc

Infineon Technologies

EPC

Qorvo

Wolfspeed

Navitas Semiconductor

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