US Gallium Nitride (GaN) Power Device Market - Strategic Insights and Forecasts (2025-2030)
Description
US Gallium Nitride (GaN) Power Device Market Size:
US Gallium Nitride (GaN) Power Device Market is anticipated to expand at a high CAGR over the forecast period.
Gallium nitride power devices stand at the intersection of material science and energy imperatives, reshaping how electricity flows through modern systems. These wide-bandgap semiconductors outperform traditional silicon in critical metrics. The immediate relevance for sectors grappling with electrification and digital acceleration is the US is driving the market expansion.
US Gallium Nitride (GaN) Power Device Market Key Highlights:
- The GaN devices deliver superior switching speeds and efficiency gains over silicon counterparts, directly boosting demand in power electronics for electric vehicles and data centers by enabling compact, high-density converters that cut energy losses.
- Federal incentives under the CHIPS and Science Act aims to bolster the domestic semiconductor production thereby spurring U.S.-based GaN manufacturing expansions.
- Expansion in 5G telecommunications infrastructure propels GaN adoption for RF power amplification, where devices handle higher frequencies with minimal distortion, increasing procurement needs for base stations and satellite systems.
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US Gallium Nitride (GaN) Power Device Market Growth Drivers:
The advancements in wide-bandgap materials propel the U.S. GaN power device market by enabling power electronics that demand fewer components and less space, directly escalating procurement for electric vehicle inverters. GaN's high breakdown field three times silicon's allows transistors to handle voltage with minimal on-resistance, thereby cutting switching losses in application such as EV traction system. This efficiency mandates GaN adoption to meet federal fuel economy standards, as manufacturers replace silicon IGBTs to achieve lighter, longer-range batteries.
The telecommunications infrastructure upgrades, particularly for 5G rollouts, intensify GaN demand through RF semiconductor applications that require high-linearity amplification at millimetre waves. GaN-on-SiC transistors deliver high switching speeds, far surpassing silicon's limits, which enables base stations to cover broader areas with less power draw. The FCC's spectrum auctions have accelerated deployments, forcing carriers to source GaN for amplifiers that minimize distortion in dense urban networks. This shift not only heightens volume orders but also favors U.S. suppliers aligned with CHIPS-funded fabs, as domestic production mitigates tariff risks on Asian imports
- Challenges and Opportunities
The gate driver incompatibilities pose acute headwinds, as GaN's rapid switching up to 50V/ns exacerbates voltage overshoots in legacy silicon-based circuits, dampening demand in cost-sensitive automotive segments where redesigns inflate upfront costs.
Thermal management constraints further erode demand, with GaN's high power density generating localized hotspots that silicon's mature packaging mitigates more readily, constraining aerospace applications where failure rates must stay below 5 FIT. Without advanced cooling, devices derate under 150°C, limiting appeal in defence radar where sustained operation is non-negotiable.
Supply chain dependencies on rare-earth gallium sourced from major economies namely China create volatility, hiking raw material prices amid geopolitical tensions and curtailing U.S. assembler confidence. This bottleneck directly throttles demand for RF devices in telecom, where consistent wafer availability underpins 5G expansions.
AI-driven data-centre surges present a demand multiplier, as GaN's low Coss enables high-voltage HVDC architectures that trim cabling losses. With hyperscalers investing billions annually to enhance their operations, opportunities arise for U.S.-made modules that comply with Buy American provisions, offsetting challenges through localized production.
- Supply Chain Analysis
The U.S. GaN production leans on Asian epitaxial wafer hubs such as Taiwan and Japan which supply majority of precursors exposing thereby dependencies that CHIPS incentives target through $105M awards to Analog Devices for mature-node expansions.
US Gallium Nitride (GaN) Power Device Market Government Regulations:
| Jurisdiction | Key Regulation / Agency | Market Impact Analysis |
|---|---|---|
| United States | CHIPS and Science Act / Department of Commerce | Mandates directly elevating GaN demand by subsidizing U.S. fabs for high-voltage devices; restricts expansions in China, compelling domestic sourcing that boosts local procurement. |
| United States | Export Administration Regulations / Bureau of Industry and Security | Curbs GaN tech transfers to adversaries, heightening U.S. military demand for verified suppliers and insulating market from gray imports |
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US Gallium Nitride (GaN) Power Device Market Segment Analysis:
- By Application: Power Electronics
Power electronics commands GaN demand through inverters that exploit the material's low switching losses, directly addressing EV traction needs where silicon's reverse recovery currents inflate inefficiencies. GaN HEMTs enable totem-pole PFC topologies at 500kHz, halving magnetics size and propelling adoption in U.S. plants. Likewise, in data centers, GaN's high-frequency edge drives DC-DC buck converters, slashing board space amid AI's annual power surge. Hyperscalers like AWS integrate GaN to meet DOE efficiency mandates, boosting module orders as thermal budgets shrink.
- By End-Use: Telecommunication
Telecommunication end-uses fuel GaN demand via RF devices that amplify 5G signals with higher linearity, thereby countering urban propagation losses and enabling denser base stations as FCC auctions allocate 3GHz spectrum. GaN PAs handle 100W output with higher efficiency, directly increasing carrier deployments.
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US Gallium Nitride (GaN) Power Device Market Competitive Environment and Analysis
The U.S. GaN landscape fragments across integrated giants and specialists namely Broadcom Inc, Renesas Electronic Corporation, and Wolfspeed.
Renesas Electric Corporation headquartered in Japan, provides Gallium Nitride (GaN) devices that features higher efficiency power conversion for applications such as electrical vehicles, data centres, consumer chargers and industrial system. The company through its regional sales channel has been providing its GaN power device in USA.
Broadcom Inc. primarily focuses on optocouplers and gate drivers for driving Gallium Nitride (GaN) power devices. The company’s GaN-related products are designed to enable efficient, high-speed switching for GaN power FETs in applications like power supplies, electric vehicles, renewable energy, industrial motor controls, and data centers. These products leverage wide-bandgap technology for lower losses, higher efficiency, and compact designs compared to traditional silicon-based solutions.
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US Gallium Nitride (GaN) Power Device Market Developments:
- October 2025: Alpha and Omega Semiconductor Limited announced their collaboration with NVIDIA Corporation which involved development usage of Alpha’s Silicon Carbide (SiC) and Gallium Nitride (GaN) power semiconductor for the development of 800 VDC power module.
- May 2025: Efficient Power Conversion (EPC) announced the availability of its “EPC2366” 40V GaN power transistor that is designed to displace low-voltage silicone MOSFET in application such as synchronous motors and DC-DC converters. The transistor feature high thermal performance and faster switching in a compact packaging.
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US Gallium Nitride (GaN) Power Device Market Scope:
| Report Metric | Details |
|---|---|
| Growth Rate | CAGR during the forecast period |
| Study Period | 2020 to 2030 |
| Historical Data | 2020 to 2023 |
| Base Year | 2024 |
| Forecast Period | 2025 – 2030 |
| Forecast Unit (Value) | Billion |
| Segmentation | Component, Deployment, Technology, Application |
| List of Major Companies in US Gallium Nitride (GaN) Power Device Market |
|
| Customization Scope | Free report customization with purchase |
US Gallium Nitride (GaN) Power Device Market Segmentation:
- By Component
- Hardware
- Software
- Services
- By Deployment
- Cloud
- On-Premise
- By Technology
- Machine Learning (ML)
- Natural Language Processing (NLP)
- Computer Vision
- Internet of Things (IoT)
- Others
- By Application
- Demand Forecasting
- Customer Relationship Management
- Supply Chain Management
- Fraud Detection & Loss Prevention
- Others
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Table Of Contents
1. EXECUTIVE SUMMARY
2. MARKET SNAPSHOT
2.1. Market Overview
2.2. Market Definition
2.3. Scope of the Study
2.4. Market Segmentation
3. BUSINESS LANDSCAPE
3.1. Market Drivers
3.2. Market Restraints
3.3. Market Opportunities
3.4. Porter's Five Forces Analysis
3.5. Industry Value Chain Analysis
3.6. Policies and Regulations
3.7. Strategic Recommendations
4. TECHNOLOGICAL OUTLOOK
5. US GALLIUM NITRIDE (GAN) POWER DEVICE MARKET BY WAFER SIZE
5.1. Introduction
5.2. 2 Inch
5.3. 4 Inch
5.4. 6 Inch
5.5. More than 6 Inch
6. US GALLIUM NITRIDE (GAN) POWER DEVICE MARKET BY DEVICE TPYE
6.1. Introduction
6.2. Power Semiconductor Device
6.3. RF Semiconductor Device
6.4. Opto-Semiconductor Device
7. US GALLIUM NITRIDE (GAN) POWER DEVICE MARKET BY APPLICATION
7.1. Introduction
7.2. Radio Frequency
7.3. Power Electronics
7.4. Laser & Phonotics
7.5. Others
8. US GALLIUM NITRIDE (GAN) POWER DEVICE MARKET BY END-USER
8.1. Introduction
8.2. Consumer Electronics
8.3. Telecommunication
8.4. Automotive
8.5. Aerosapce & Defense
9. COMPETITIVE ENVIRONMENT AND ANALYSIS
9.1. Major Players and Strategy Analysis
9.2. Market Share Analysis
9.3. Mergers, Acquisitions, Agreements, and Collaborations
9.4. Competitive Dashboard
10. COMPANY PROFILES
10.1. Broadcom Inc.
10.2. Renesas Electronics Corporation
10.3. Wolfspeed, Inc.
10.4. Qorvo, Inc.
10.5. Northrop Grumman
10.6. Texas Instruments Incorporated
10.7. Sumitomo Electric Industries Ltd.
10.8. NXP Semiconductors
10.9. MACOM
10.10. Onsemi
11. APPENDIX
11.1. Currency
11.2. Assumptions
11.3. Base and Forecast Years Timeline
11.4. Key benefits for the stakeholders
11.5. Research Methodology
11.6. Abbreviations
LIST OF FIGURES
LIST OF TABLES
Companies Profiled
Broadcom Inc.
Renesas Electronics Corporation
Wolfspeed, Inc.
Qorvo, Inc.
Northrop Grumman
Texas Instruments Incorporated
Sumitomo Electric Industries Ltd.
NXP Semiconductors
MACOM
Onsemi
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