GaN Semiconductor Devices Market Size, Share, Opportunities, And Trends By Type (Power Semiconductors, RF Semiconductors, Opto-Semiconductors), By Component (Diodes, Transistors, Rectifiers, Power ICs), By Industry Vertical (Consumer Electronics, Automotive, Communications, Medical, Aerospace And Defense, Others), And By Geography - Forecasts From 2023 To 2028

  • Published : Apr 2023
  • Report Code : KSI061614857
  • Pages : 138

Gallium nitride (GaN) semiconductor device. GaN-based power devices are mechanically robust wide bandgaps that work significantly better than silicon-based ones in terms of breakdown strength, switching speed, thermal conductivity, and on-resistance. Higher energy efficiency, reduced costs, and faster device speed are a few of the benefits that GaN semiconductor devices have over silicon devices. The GaN semiconductor devices market is anticipated to grow in response to rising demand for consumer electronics such as smartphones, gaming consoles, laptops, and TVs. The increasing demand for base stations and high-power transistors brought on by the adoption of the 5G standard is further expected to boost the GaN semiconductors devices market growth over the forecasted period.

The rising usage of diodes will boost the market growth

Electrical networks in electronic devices use signal diodes, which can only transmit electrical data in one direction. A diode has certain advantages such as it loses less energy as the current passes through it, making it an ideal replacement for signals produced by tiny currents where significant energy loss could cause signal distortion. The growing number of electronic devices will boost the demand for signal diodes thereby leading to GaN semiconductor devices market growth.  According to the federal reserve system, the industrial production of home electronic appliances climbed by 15.2% of rate from January 2022 to January 2023. According to World Bank data, the electronic and electric appliance industry is expected to increase further in the coming years and will be reaching more than 450 billion US dollars in value by 2023.

Increasing demand in the consumer electronics industry will boost the market growth

GaN is becoming more and more popular in 5G multi-chip modules because these networks require more energy-efficient technology, as a result, several semiconductor firms are working to incorporate GaN into 5G multi-chip systems and have developed several products which will drive the GaN semiconductor market growth. For instance, in June 2021 NXP Semiconductors revealed that GaN technology had been incorporated into its multi-chip module.  Gallium Nitride (GaN) technology integration into its multi-chip module platform for 5G infrastructure represents a significant industry milestone for the 5G energy economy, increasing efficiency by 8%. The advent of 5G wireless communication coupled with growing electronics device utilization will positively impact the demand for GaN semiconductors devices. According to the Federal Communications Commission, the number of 5G mobile service subscriptions in the United States rose by 161.4% to 41.3 million in 2021 from 2020, with rapid growth anticipated to continue for several years. These product launches and advancements in 5G technology will certainly drive the growth of the GaN semiconductor devices market.

Asia Pacific region is anticipated to dominate the market during the forecast period.

Asia-Pacific is anticipated to dominate the GaN semiconductor devices market during the projection period as a result of the flourishing electronics industry in countries like China and India. For instance, according to the State Council of the People's Republic of China, major electronics manufacturers' added value increased 12.7% year over year in the two months between January and February 2022, as opposed to the 7.5% growth experienced by the nation's entire industrial sector. The rapid adoption of 5G networks, the expansion of Internet of Things (IoT) applications for devices, including assisted driving and vehicle-to-everything connectivity for smart transportation and the use of EVs in the area, is anticipated to boost the GaN semiconductor market. According to the IEA data, the registration of battery electric vehicles in China increased from 931 thousand units in 2020 to 2734 thousand units in 2021 showing the electric vehicle market share increased from 5 % to 16 % in one year. In October 2022, the government of India officially introduced 5G services in India. The 5G use cases were created by telecommunications companies and start-ups in the fields of labor safety, smart agriculture, and others. are currently being implemented nationally. Such an increase in 5G technology and electric vehicle usage due to the increase in IOT applications in the Asia-pacific region will boost the GaN semiconductor devices market growth.

Market Key Developments.

  • In April 2022, Top power semiconductor manufacturer ROHM Co Ltd. (Japan) and top power supply manufacturer Delta Electronics Inc. (US) collaborated to develop and mass-produce gallium nitride (GaN) power devices. ROHM mass-produced GaN high-electron-mobility transistors (HEMTs) with a ground-breaking 8V gate that can withstand voltage in March.

GaN Semiconductor Devices Market Scope:

 

Report Metric Details
Growth Rate CAGR during the forecast period
Base Year 2021
Forecast Period 2023 – 2028
Forecast Unit (Value) USD Billion
Segments Covered Type, Component, Industry Vertical, and Geography 
Regions Covered North America, South America, Europe, Middle East and Africa, Asia Pacific
Companies Covered Toshiba Corporation, Wolfspeed Inc, GaN Systems Inc, Infineon Technologies AG, Efficient Power Conversion Corp, NXP Semiconductors NV, Texas Instruments, NTT Advanced Technology Corp, STMicroelectronics, Nexperia
Customization Scope Free report customization with purchase

 

Segmentation

  • By Type
    • Power Semiconductors
    • RF Semiconductors
    • Opto-Semiconductors
  • By Component
    • Diodes
    • Transistors
    • Rectifiers
    • Power ICs
  • By Industry Vertical
    • Consumer Electronics
    • Automotive
    • Communications
    • Medical
    • Aerospace and Defense
    • Others
  • By Geography
    • North America
      • USA
      • Canada
      • Mexico
    • South America
      •  Brazil
      • Argentina
      • Others
    • Europe
      • Germany
      • UK
      • France
      • Spain
      • Others
    • Middle East and Africa
      • Suadi Arabia
      • UAE
      • Others
    • Asia Pacific
      • China
      • Japan
      • South Korea
      • India
      • Australia
      • Others

Frequently Asked Questions (FAQs)

2021 has been taken as the base year in the GaN semiconductor devices market.
Prominent key market players in the GaN semiconductor devices market include Toshiba Corporation, Wolfspeed Inc, GaN Systems Inc, Infineon Technologies AG, and Efficient Power Conversion Corp, among others.
The GaN semiconductor devices market has been segmented by type, component, industry vertical, and geography.
The GaN semiconductor devices market is anticipated to grow in response to rising demand for consumer electronics such as smartphones, gaming consoles, laptops, and TVs.
Asia Pacific region is anticipated to dominate the GaN semiconductor devices market.

1. INTRODUCTION

1.1. Market Overview

1.2. Market Definition

1.3. Scope of the Study

1.4. Market Segmentation

1.5. Currency

1.6. Assumptions

1.7. Base, and Forecast Years Timeline

2. RESEARCH METHODOLOGY  

2.1. Research Data

2.2. Assumptions

3. EXECUTIVE SUMMARY

3.1. Research Highlights

4. MARKET DYNAMICS

4.1. Market Drivers

4.2. Market Restraints

4.3. Market Opportunities

4.4. Porter’s Five Force Analysis

4.4.1. Bargaining Power of Suppliers

4.4.2. Bargaining Power of Buyers

4.4.3. Threat of New Entrants

4.4.4. Threat of Substitutes

4.4.5. Competitive Rivalry in the Industry

4.5. Industry Value Chain Analysis

5. GAN SEMICONDUCTOR DEVICES MARKET ANALYSIS, BY TYPE

5.1. Introduction

5.2. Power Semiconductors 

5.3. RF Semiconductors

5.4. Opto-Semiconductors 

6. GAN SEMICONDUCTOR DEVICES MARKET ANALYSIS, BY COMPONENT

6.1. Introduction

6.2. Diodes

6.3. Transistors 

6.4. Rectifiers 

6.5. Power ICs

7. GAN SEMICONDUCTOR DEVICES MARKET ANALYSIS, BY INDUSTRY VERTICAL

7.1. Introduction

7.2. Consumer Electronics

7.3. Automotive

7.4. Communications

7.5. Medical

7.6. Aerospace and Defense

7.7. Others 

8. GAN SEMICONDUCTOR DEVICES MARKET ANALYSIS, BY GEOGRAPHY

8.1. Introduction

8.2. North America 

8.2.1. USA

8.2.2. Canada

8.2.3. Mexico

8.3. South America 

8.3.1. Brazil

8.3.2. Argentina

8.3.3. Others

8.4. Europe 

8.4.1. UK

8.4.2. Germany

8.4.3. France

8.4.4. Italy

8.4.5. Spain 

8.4.6. Others

8.5. Middle East and Africa 

8.5.1. Saudi Arabia

8.5.2. UAE

8.5.3. Others

8.6. Asia Pacific 

8.6.1. China

8.6.2. Japan

8.6.3. India

8.6.4. South Korea

8.6.5. Taiwan

8.6.6. Thailand 

8.6.7. Indonesia 

8.6.8. Others

9. COMPETITIVE ENVIRONMENT AND ANALYSIS

9.1. Major Players and Strategy Analysis

9.2. Emerging Players and Market Lucrativeness

9.3. Mergers, Acquisitions, Agreements, and Collaborations

9.4. Vendor Competitiveness Matrix

10. COMPANY PROFILES

10.1. Toshiba Corporation

10.2. Wolfspeed Inc

10.3. GaN Systems Inc

10.4. Infineon Technologies AG

10.5. Efficient Power Conversion Corp

10.6. NXP Semiconductors NV

10.7. Texas Instruments

10.8. NTT Advanced Technology Corp

10.9. STMicroelectronics

10.10. Nexperia 


Toshiba Corporation

Wolfspeed Inc

GaN Systems Inc

Infineon Technologies AG

Efficient Power Conversion Corp

NXP Semiconductors NV

Texas Instruments

NTT Advanced Technology Corp

STMicroelectronics

 

Nexperia