1. EXECUTIVE SUMMARY
2. MARKET SNAPSHOT
2.1. Market Overview
2.2. Market Definition
2.3. Scope of the Study
2.4. Market Segmentation
3. BUSINESS LANDSCAPE
3.1. Market Drivers
3.2. Market Restraints
3.3. Market Opportunities
3.4. Porter's Five Forces Analysis
3.5. Industry Value Chain Analysis
3.6. Policies and Regulations
3.7. Strategic Recommendations
4. TECHNOLOGICAL OUTLOOK
5. US GALLIUM NITRIDE (GAN) POWER DEVICE MARKET BY WAFER SIZE
5.1. Introduction
5.2. 2 Inch
5.3. 4 Inch
5.4. 6 Inch
5.5. More than 6 Inch
6. US GALLIUM NITRIDE (GAN) POWER DEVICE MARKET BY DEVICE TPYE
6.1. Introduction
6.2. Power Semiconductor Device
6.3. RF Semiconductor Device
6.4. Opto-Semiconductor Device
7. US GALLIUM NITRIDE (GAN) POWER DEVICE MARKET BY APPLICATION
7.1. Introduction
7.2. Radio Frequency
7.3. Power Electronics
7.4. Laser & Phonotics
7.5. Others
8. US GALLIUM NITRIDE (GAN) POWER DEVICE MARKET BY END-USER
8.1. Introduction
8.2. Consumer Electronics
8.3. Telecommunication
8.4. Automotive
8.5. Aerosapce & Defense
9. COMPETITIVE ENVIRONMENT AND ANALYSIS
9.1. Major Players and Strategy Analysis
9.2. Market Share Analysis
9.3. Mergers, Acquisitions, Agreements, and Collaborations
9.4. Competitive Dashboard
10. COMPANY PROFILES
10.1. Broadcom Inc.
10.2. Renesas Electronics Corporation
10.3. Wolfspeed, Inc.
10.4. Qorvo, Inc.
10.5. Northrop Grumman
10.6. Texas Instruments Incorporated
10.7. Sumitomo Electric Industries Ltd.
10.8. NXP Semiconductors
10.9. MACOM
10.10. Onsemi
11. APPENDIX
11.1. Currency
11.2. Assumptions
11.3. Base and Forecast Years Timeline
11.4. Key benefits for the stakeholders
11.5. Research Methodology
11.6. Abbreviations
LIST OF FIGURES
LIST OF TABLES