High Electron Mobility Transistor Market Size, Share, Opportunities, And Trends By By Material Type (Gallium Nitride (GaN), Silicon Carbide (SiC), Gallium Arsenide (GaAs), Others), By End-User Industry (Consumer Electronics, Automotive, Industrial, Aerospace & Defense, Telecommunications, Others), And By Geography – Forecasts From 2025 To 2030

High Electron Mobility Transistor Market Size:

The High Electron Mobility Transistor Market is expected to grow from US$6.389 billion in 2025 to US$8.136 billion in 2030, at a CAGR of 4.95%.

A high electron mobility transistor (HEMT) is a field-effect transistor that combines a junction between two kinds with distinct band gaps as the channel. A HEMT device's major properties are the ability to operate at higher frequencies, which expands its uses in high-frequency devices.

Ample investments and improvements of HEMTs by key companies are projected to boost the HEMT market's growth. Furthermore, the strong demand for innovative HEMT technologies in the aerospace and military industries, as well as the automotive sector, is predicted to provide profitable prospects for the worldwide high electron mobility transistor business to expand.

High Electron Mobility Transistor Market Growth Drivers:

• The increasing demand for high electron mobility transistors in the automotive industry will boost the market share.

The increasing end-user applications by diverse industries have led companies to launch innovative products which have significantly transformed the market to develop for the upcoming years. Due to their high internal frequency switching, HEMT circuits are now in great demand in spacecraft because they reduce the size of related components such as inductors, converters, resistors, and capacitors.  Furthermore, advances in artificial intelligence and its incorporation with consumer technology have resulted in the development of a wide range of goods, including smart speakers, smart lighting, and other smart home devices.

This first indigenous HEMT device composed of gallium nitride (GaN) is beneficial in electric automobiles, locomotives, power transmission, and other fields needing high high-frequency and high-voltage switching, lowering the cost of importing such robust and efficient transistors necessary in power electronics.

For efficient switching performance, power electronic systems require high blocking voltage in the off-state and high current in the on-state. Specific transistors known as HEMTs built of aluminum gallium nitride/gallium nitride (AlGaN/GaN) give an advantage over silicon-based transistors because they allow systems to work at very voltage spikes, switch ON and OFF faster, and operate at lower temperatures.

• The rising demand for the market from the military and aviation industries

The spacecraft industry has seen an increase in demand for high electron mobility transistor circuits. A similar tendency has been observed as demand for consumer electronics items that employ high electron mobility transistor circuits has increased.

Microchip Technology, a producer of embedded solutions, extended its portfolio of Gallium Nitride (GaN) RF power devices with new monolithic microwave integrated circuits (MMICs) and discrete transistors aimed at applications such as 5G and a variety of aerospace and defense use cases. The new GaN MMICs have frequency ranges ranging from 2 GHz to 20 GHz, and they combine high power-added efficiency (PAE), high linearity to improve performance, and discrete high electron mobility transistor (HEMT) devices. The devices are made with GaN-on-silicon carbide technology, which offers the optimum combination of high efficiency and yield, as well as high-voltage functioning and a lifetime of more than 1 million hours at a junction temperature of 255o C.

High Electron Mobility Transistor Market Geographical Outlook:

• North America holds a considerable share during the forecast period.

North America is the main area that has contributed to the high electron mobility transistor market's expansion. North America is the market's dominant region, owing to expanding consumer electronics demand and increased investment by nations such as the United States. Asia Pacific is expected to be the fastest-growing area due to increased government incentives to create new technologies such as High Electron Mobility Transistors (HEMT).

High Electron Mobility Transistor Market Segmentations:

High Electron Mobility Transistor Market Segmentation By Material Type

The market is analyzed by material type into the following:

High Electron Mobility Transistor Market Segmentation By End-User Industry

The report analyzes the market by end-user industry as below:

• Consumer Electronics
• Automotive
• Industrial
• Aerospace & Defense
• Telecommunications
• Others

High Electron Mobility Transistor Market Segmentation By Regions:

The study also analyzed the high electron mobility transistor market into the following regions, with country-level forecasts and analysis as below:

• North America (USA, Canada, and Mexico)
• South America (Brazil, Argentina, and Others)
• Europe (Germany, UK, France, Spain, and Others)
• Middle East and Africa (Saudi Arabia, UAE, and Others)
• Asia Pacific (China, Japan, India, South Korea, Thailand, Indonesia, and Others)

High Electron Mobility Transistor Market Competitive Landscape:

The high electron mobility transistor market features key players such as Infineon Technologies AG, Mitsubishi Electric Corporation, Qorvo Inc., STMicroelectronics, Microchip Technology Inc., Ampleon, and Texas Instruments Inc., among others.

High Electron Mobility Transistor Market Report Coverage:

This report provides extensive coverage as explained in the points below:

• High electron mobility transistor market size, forecasts, and trends by different material types, with historical revenue data and analysis focusing on key factors driving adoption, current challenges faced by key players, and major growth areas.
• High electron mobility transistor market size, forecasts, and trends by end-user industry, with historical revenue data and analysis across various segments.
• High electron mobility transistor market is also analysed across different regions, with historical data, regional share, attractiveness, and opportunity of these solutions in different countries. The growth prospects and key players operating in these markets. The section also dwells on the macro factors, economic scenario and other complementing factors aiding in market growth.
• Market dynamics: The section details the market growth factors, restraints, and opportunities in the market. The segment also presents a complete market scenario with the help of Porter’s five forces model.
• Competitive Intelligence: A thorough investigation of the competitive structure of the market presented through a proprietary vendor matrix model, market share analysis of key players, insights on strategies of key players, and recent major developments undertaken by the companies to gain a competitive edge.
• Research methodology: The assumptions and sources that were considered to arrive at the final market estimates. Additionally, our model is refined to ensure most significant factors are taken into consideration with the proper hypothesis and bottom-up and top-down approaches to enhance the reliability of forecasts, further strengthening the trustworthiness of the numbers being presented.

How this report is helpful to you, and reasons for purchase?

• The report provides a strategic outlook of the high electron mobility transistor market to the decision-makers, analysts and other stakeholders in the easy to read format for taking informed decisions.
• The charts, tables and figures make it easy for the executives to gain valuable insights while skimming the report.
• Analyst support through calls and email for timely clarification and incorporating additional requests.
• Option of presentation or doc format with the estimates file to take care of diverse requirements.
• 15% FREE customization with all our reports help cater additional requirements with significant cost-savings.
• Option of purchasing specific segments of the study, including opting for summary reports or just the estimates file. 

High Electron Mobility Transistor Market Scope:

Report Metric	Details
Study Period	2021 to 2031
Historical Data	2021 to 2024
Base Year	2025
Forecast Period	2026 – 2031

Report Metric	Details
High Electron Mobility Transistor Market Size in 2025	US$6.389 billion
High Electron Mobility Transistor Market Size in 2030	US$8.136 billion
Growth Rate	CAGR of 4.95%
Study Period	2020 to 2030
Historical Data	2020 to 2023
Base Year	2024
Forecast Period	2025 – 2030
Forecast Unit (Value)	USD Billion
Segmentation	Material Type End-User Industry Geography
Geographical Segmentation	North America, South America, Europe, Middle East and Africa, Asia Pacific
List of Major Companies in High Electron Mobility Transistor Market	Infineon Technologies AG Mitsubishi Electric Corporation Qorvo Inc. STMicroelectronics Microchip Technology Inc.
Customization Scope	Free report customization with purchase