Monolithic Microwave Integrated Circuit Market Size, Share, Opportunities, COVID-19 Impact, And Trends By Material (Gallium Arsenide (GaAs), Silicon-Germanium, Gallium Nitride (GaN), Others), By Technology (HEMT (High Electron Mobility Transistor), MeSFET (Metal-Semiconductor Field-Effect Transistor), HBT (Heterojunction Bipolar Transistor), MoS (Metal Oxide Semiconductor)), By End User (Consumer Electronics, Automotives, Communication, Aerospace And Defense, Others), And By Geography - Forecasts From 2023 To 2028

  • Published : Feb 2023
  • Report Code : KSI061614319
  • Pages : 140

Market Overview:

MMICs are monolithic microwave integrated circuits that operate at microwave frequencies (300 MHz to 300 GHz). They are extremely tiny and can be mass-produced on a big scale. MMICs provide a variety of purposes, including microwave mixing, power, low-noise amplification, and high-frequency switching. MMICs are now a popular alternative for high-frequency applications because of benefits such as small size, low cost, and good performance. Advanced semiconductor technology is critical in the evolution of RF and microwave applications for 5G and satellite communications (Satcom), where the next generation of systems is going towards millimetre-wave (mmWave) frequencies. Increasing bandwidth requirements across various industries increased digitalization globally through an increase in wireless communication applications, and the evolution and installation of 5G networks will drive the market over the projection period.

Growth factors:

MMIC in satellite communication

The optimization of size, weight, and power (SWaP) factors is a primary goal for the majority of aerospace electronics development projects. MMICs are usually the best solution for signal processing in these instances. MMICs are rapidly being used in aerospace applications due to their low cost and high precision qualities, and this has led to an increase in global space programs. Monolithic microwave integrated circuits created by the DRDO, for example, are on board the EOS04 satellite launched by the Indian Space Research Organization in February 2022. The circuits were employed in satellite radar imaging modules. Furthermore, In June 2021, Nxbeam Inc., a fabless semiconductor firm developing the next generation of wireless goods, will release Ku-band and Ka-band gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) power amplifiers. The new MMICs, which are ideal for satellite communication terminals, offer clients exceptional performance in terms of output power, gain, and efficiency in a tiny footprint. The new MMIC was created to help satellite communication systems generate high RF output while also ensuring that the signal preserves the desired characteristics. As these devices are frequently employed in aerospace systems, such improvements may boost the monolithic microwave IC industry prediction.

MMIC is widely used in the automobile end-user market as a result of ADAS technology.

Due to the fast acceptance of these devices in a wide range of ADAS technologies, the automotive application is expected to gain a sizable industry share. Automotive radar MMICs can enable safety-critical applications such as driver assistance and automatic emergency braking systems, driving the implementation of these circuits in automobiles. For example, Renesas Electronics Corp. will enter the automotive radar market in September 2022 with the release of a 44-channel, 76-81GHz transceiver designed to meet the demanding needs of advanced driver assistance systems (ADAS) and Level 3 and higher autonomous driving applications. Renesas will add the new RAA270205 high-definition radar transceiver into its growing sensor fusion portfolio, which blends radar, vision systems, and other sensing modalities, leveraging automotive knowledge gathered through years of global client engagements. The innovative MMIC (monolithic microwave integrated circuit) transceiver is best suited for imaging radar, long-range forward-looking radar, and 4D radar, but it can also be utilized for corner and central-processing radar topologies, or "satellite" automobile radar systems.

Gallium arsenides (GaAs) will grow at a significantly faster rate than other materials.

With rising demand and limited availability of electronic basic materials such as silicon wafers, scientists, engineers, and manufacturers in the electronics sector are constantly on the lookout for substitute materials. Gallium, in the form of gallium nitride (GaN) and gallium arsenide (GaAs), has emerged as a strong candidate, if not a substitute for silicon, to at least complement its scarcity in the electronics sector. For instance, The CGY2175AUH/C1 from OMMIC is a high-performance, integrated GaAs MMIC featuring a Phase Shifter, Attenuator, and T/R Switch from 4.5 to 6.5 GHz. A 6-bit phase shifter, a 6-bit attenuator, and a T/R switch are included in this 3-port GaAs MMIC Core Chip. This C-band device was built with OMMIC's 0.18 m gate length PHEMT technology. Its on-chip series-to-parallel converter reduces the number of bond pads and makes essential chip functionalities much easier to operate.

Key Developments: 

  • January 2023: CML Microsystems Plc, based in the United Kingdom, develops mixed-signal, RF, and microwave semiconductors for communications applications, has signed a formal deal to purchase Silicon Valley-based semiconductor firm Microwave Technology (MIT) for up to $18 million. MIT, founded in 1982, designs and manufactures monolithic microwave integrated circuits (MMICs) based on gallium arsenide (GaAs) and gallium nitride (GaN), discrete devices, and hybrid amplifier products.
  • September 2022: Altum RF has introduced a 400W S-band power amplifier monolithic microwave integrated circuit (MMIC) in collaboration with Eindhoven-based research institute TNO (the Netherlands Organization for Applied Scientific Research in Delft), using the NP45-11 technology of compound semiconductor wafer foundry WIN Semiconductors Corp of Taoyuan City, Taiwan. The strategic partnership between Altum RF and TNO resulted in what is considered to be cutting-edge RF to millimetre-wave products and technologies for commercial markets and applications. Altum RF will be able to market some of TNO's unique technical capabilities as a result of this agreement.
  • February 2020: Qorvo, a global provider of innovative RF solutions, announced the completion of its purchase of Custom MMIC, a leading producer of high-performance GaAs and GaN monolithic microwave integrated circuits (MMICs) for defense, aerospace, and commercial applications.

Covid-19 Impact on the Monolithic Microwave Integrated Circuit Market

The unexpected breakout of COVID-19 has hampered market growth, and the trend is projected to persist until the world's damaged supply networks stabilize. On the demand side, COVID-19 has had a slight but noticeable impact on overall shipment. COVID-19 has benefited the wireless communication infrastructure. For example, network demand increased as a result of increased demand for online classes for schools and universities (distance education) and required work-from-home standards in some areas of the world. Because of increased defense spending, government-led initiatives for space missions, and advancements in 5G communication infrastructure, a rapid rebound is projected in the post-pandemic period.

Monolithic Microwave Integrated Circuit Market Scope:


Report Metric Details
Growth Rate CAGR during the forecast period
Base Year 2021
Forecast Period 2023–2028
Forecast Unit (Value) USD Billion
Segments Covered Material, Technology, End-User, and Geography
Regions Covered North America, South America, Europe, Middle East and Africa, Asia Pacific
Companies Covered Qorvo Inc, STMicroelectronics, Infineon Technologies, Skyworks Solutions, Wolfspeed Inc, Toshiba, Mitsubishi Electric Corporation, Microchip Technology Inc, MACOM, Fujitsu Ltd 
Customization Scope Free report customization with purchase



  • By material
    • Gallium Arsenide (GaAs)
    • Silicon-Germanium
    • Gallium Nitride (GaN)
    • Others
  • By technology
    • HEMT (High Electron Mobility Transistor)
    • MeSFET (Metal-Semiconductor Field-Effect Transistor)
    • HBT (Heterojunction Bipolar Transistor)
    • MoS (Metal Oxide Semiconductor)
  • By end-user
    • Consumer electronics
    • Automotives
    • Communication
    • Aerospace and Defense
    • Others 
  • By Geography 
    • North America
      • USA
      • Canada
      • Mexico
    • South America
      • Brazil
      • Argentina
      • Others
    • Europe
      • UK
      • Germany
      • France
      • Italy
      • Spain
      • Others
    • Middle East and Africa
      • Saudi Arabia
      • UAE
      • Israel
      • Others
    • Asia Pacific
      • China
      • Japan
      • India
      • South Korea
      • Australia
      • Others


1.1. Market Overview

1.2. Market Definition

1.3. Scope of the Study

1.4. Market Segmentation

1.5. Currency

1.6. Assumptions

1.7. Base, and Forecast Years Timeline



2.1. Research Data

2.2. Assumptions



3.1. Research Highlights



4.1. Market Drivers

4.2. Market Restraints

4.3. Market Opportunities

4.4. Porter’s Five Force Analysis

4.4.1. Bargaining Power of Suppliers

4.4.2. Bargaining Power of Buyers

4.4.3. Threat of New Entrants

4.4.4. Threat of Substitutes

4.4.5. Competitive Rivalry in the Industry

4.5. Industry Value Chain Analysis



5.1. Introduction

5.2. Gallium Arsenide (GaAs)

5.3. Silicon-Germanium

5.4. Gallium Nitride (GaN)

5.5. Others 



6.1. Introduction

6.2. HEMT (High Electron Mobility Transistor)

6.3. MeSFET (Metal-Semiconductor Field-Effect Transistor)

6.4. HBT (Heterojunction Bipolar Transistor)

6.5. MoS (Metal Oxide Semiconductor)



7.1. Introduction

7.2. Consumer electronics

7.3. Automotives 

7.4. Communication

7.5. Aerospace and Defense

7.6. Others



8.1. Introduction

8.2. North America 

8.2.1. USA

8.2.2. Canada

8.2.3. Mexico

8.3. South America 

8.3.1. Brazil

8.3.2. Argentina

8.3.3. Others

8.4. Europe 

8.4.1. UK

8.4.2. Germany

8.4.3. France

8.4.4. Italy

8.4.5. Spain 

8.4.6. Others

8.5. Middle East and Africa 

8.5.1. Saudi Arabia

8.5.2. UAE

8.5.3. Israel 

8.5.4. Others

8.6. Asia Pacific 

8.6.1. China

8.6.2. Japan

8.6.3. India

8.6.4. South Korea

8.6.5. Australia

8.6.6. Others



9.1. Major Players and Strategy Analysis

9.2. Emerging Players and Market Lucrativeness

9.3. Mergers, Acquisitions, Agreements, and Collaborations

9.4. Vendor Competitiveness Matrix



10.1. Qorvo Inc 

10.2. STMicroelectronics 

10.3. Infineon Technologies 

10.4. Skyworks Solutions 

10.5. Wolfspeed Inc 

10.6. Toshiba 

10.7. Mitsubishi Electric Corporation 

10.8. Microchip Technology Inc 

10.9. MACOM 

10.10. Fujitsu Ltd 

Qorvo Inc


Infineon Technologies

Skyworks Solutions

Wolfspeed Inc


Mitsubishi Electric Corporation

Microchip Technology Inc


Fujitsu Ltd