GaN or Gallium Nitride is a material which is used in the development of semiconductor power devices, LEDs or light emitting diodes and RF components. This material has a high sensitivity towards ionizing radiation which makes it suitable for application in solar cell arrays for satellites. The power devices based on Gallium Nitride offer improved performance attributes such as enhanced efficiency, power handling and low manufacturing cost as compared to the power devices based on silicon such as MOSFET devices. Moreover, the GaN power devices have superior reverse-recovery performance, fast switching speed, and have low conductance losses. They need less power to drive the circuits and yield less switching losses. Such advantages of gallium nitride power devices over their silicon counterparts have driven consumers to switch to gallium nitride power devices which drive the market of GaN power devices globally. Moreover, expansion of various end user industries such as consumer electronics, automotive and aerospace which utilises power devices based on gallium nitride or GaN on account of their better performance also drive the market of GaN Power Device across the globe. Furthermore, the demand of GaN power devices has increased for wireless charging and for commercial RF applications which has also significantly impacted the global growth. However, the emerging use of other alternative technology such as power devices based on silicon carbide (SiC) can inhibit the market growth across the globe. Geographically, North America is expected to contribute widely towards the global growth of this market on account of sophistication of battery technology followed by Asia Pacific region. Factors such as rising demand for power devices in many end industries such as computing, telecommunications, industrial and automotive will fuel the growth in APAC.
Research Methodology
Firstly, the report provides a brief introduction of the market and deals with detailed research methodology for calculating market size and forecasts, secondary data sources used and the primary inputs which were taken for data validation. This section also outlines various segmentations which have been covered as part of the report.
Market Dynamics
Next, the section provides comprehensive market dynamics through an overview section along with growth drivers, challenges, and opportunities which exist in the current market. This section of the report also provides supplier and industry outlook as a whole; key industry, global and regional regulations which are determining the market growth and a brief technological aspect of GaN Power Device. Complete industry analysis has also been covered by Porter’s five forces model as a part of this report section.
Segmentation
Thirdly, GaN Power Device Market has been segmented on the basis of device type, voltage range, end user industry and geography as follows:
By Device Type
Integrated Power Device
Discrete Power Device
By Voltage Range
Less than 200 volt
Between 200 and 600 volt
More than 600 volt
By End User Industry
Telecommunications
Automotive
Enterprise
Medical
Industrial
Others
By Geography
North America
U.S.
Canada
Mexico
Others
South America
Brazil
Argentina
Others
Europe
UK
Germany
France
Italy
Others
Middle East and Africa
Saudi Arabia
UAE
Israel
Others
Asia-Pacific
Japan
China
India
Australia
South Korea
Others
Market Players
Finally, competitive intelligence section deals with major players in the market, their market shares, growth strategies, products, financials, and recent investments among others. Key industry players profiled as part of this section are VisIC, FUJITSU and MACOM.
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