Wide-Bandgap Power Semiconductor Market Size, Share, Opportunities, COVID-19 Impact, And Trends By Material (Silicon Carbide (SiC), Gallium Nitride (GaN), Diamond, Gallium Oxide, Aluminum Nitride (AIN)), By Application (Data Centers, Renewable Energy Generation, Hybrid And Electric Vehicles, Motor Drives), And By Geography - Forecasts From 2022 To 2027

Published:  Mar 2022 Report Code: KSI061611371 Pages: 124

The wide-bandgap power semiconductor market is projected to witness a CAGR of 24.95% during the forecast period to reach a total market size of US$4,875.463 million by 2027, increasing from US$1,025.326 million in 2020.


Wide-bandgap (WBG) semiconductors modified with molecular species are materials with unique optical and electronic properties. They are smaller, faster, more reliable power electronic components and have higher efficiency than their silicon-based counterparts.

Market Drivers

Due to their scientific and technological properties, WBG power semiconductors have gained popularity in the field of high-performance optoelectronic and electronic devices. As the demand for consumer electronics continues to surge during this timeframe, the demand for WBG semiconductors is presumed to grow far and wide. The physical characteristics of the devices are transformed at t- high frequencies. While its chemical and mechanical features seeped their way into optoelectronic applications. Thus, the high-performance uses coupled with the novel properties are paving the way for the market and carving new opportunities for the years to come.

By material, silicon carbide (SiC) and gallium nitride (GaN) capture a significant share of the market due to their high efficiencies. Geographically, the Asia-Pacific region is expected to grow at a faster rate during the period owing to the development of semiconductor technology in the region.  Data centres are avid users of WBG power semiconductors because of the requirements for high-efficiency, reliable electricity at the lowest possible cost.

Growth Factors

  • Application in power electronics

The physical and electrical properties of wide-bandgap materials make them a well-suited option to power electronics. WBG materials’ like silicon, gallium arsenide, gallium nitride, etc., have a vast bandgap that translates to a higher breakdown electric field, higher operating–temperature capability, and lower susceptibility to radiation. They are often considered superior to regular semiconductors. Apart from the existing uses of WBG power semiconductors, the market is filled with potential for commercially viable and efficient power semiconductors.

Superior characteristics

WBG power semiconductors have some exceptional qualities like high-switching speed, high voltage, and high temperature. Exploring these capabilities can lead to massive energy savings in industrial processing and consumer appliances, accelerate the widespread use of electric vehicles and fuel cells, and help integrate renewable energy onto the electric grid. Moreover, devices can operate at much higher temperatures, voltages, and frequencies, which makes the devices more efficient and last longer. Since these semiconductors are superior to conventional technologies, the market will garner more share in the years to come.


The full potential of the WBG power semiconductor is being challenged by the high cost of investment and the rising price of raw materials. These factors are making it difficult for emerging players to operate and also raise strong barriers to entry for new firms.

COVID–19’s Impact on the Wide-Bandgap Power Semiconductor Market:

The WBG power semiconductor is highly reliant on its end-user industries.  Some industries, like consumer electronics, flourished during the pandemic owing to the digital boom, remote work culture, and distance learning, among others. Other sectors, like automotives, witnessed a downturn as demand fell due to the imposing lockdowns. Overall, the market has foreseen a mixed response during the pandemic. However, investments in R&D and innovation increased as a result of the prospect of newer product launches and applications to combat the pandemic's effects.

Wide-Bandgap Power Semiconductor Market:

Report Metric Details
 Market size value in 2020  US$1,025.326 million
 Market size value in 2027  US$4,875.463 million
 Growth Rate  CAGR of 24.95% from 2020 to 2027
 Base year  2020
 Forecast period  2022–2027
 Forecast Unit (Value)  USD Million
 Segments covered  Material, Application, And Geography
 Regions covered  North America, South America, Europe, Middle East and Africa, Asia Pacific
 Companies covered  ROHM SEMICONDUCTOR, Cree, Inc., STMicroelectronics, Infineon Technologies   AG, Mitsubishi Electric Corporation, SEMIKRON, Texas Instruments, Maxim   Integrated, Analog Devices, Inc.
 Customization scope  Free report customization with purchase


Market Segmentation:

  • By Material
    • Silicon Carbide (SiC)
    • Gallium Nitride (GaN)
    • Diamond
    • Gallium Oxide
    • Aluminum Nitride (AIN)
  • By Application
    • Data Centers
    • Renewable Energy Generation
    • Hybrid and Electric Vehicles
    • Motor Drives
  • By Geography
    • North America
      • USA
      • Canada
      • Mexico
    • South America
      • Brazil
      • Argentina
      • Others
    • Europe
      • Germany
      • France
      • United Kingdom
      • Italy
      • Spain
      • Others
    • Middle East and Africa
      • Saudi Arabia
      • UAE
      • Israel
      • Others
    • Asia Pacific
      • China
      • Australia
      • Japan
      • South Korea
      • India
      • Thailand
      • Taiwan
      • Indonesia
      • Others

Frequently Asked Questions (FAQs)

Q1. What will be the wide-bandgap power semiconductor market size by 2027?
A1. The wide-bandgap power semiconductor market is projected to reach a total market size of US$4,875.463 million in 2027.

Q2. What are the growth prospects for the wide-bandgap power semiconductor market?
A2. The global wide-bandgap power semiconductor market is projected to witness a CAGR of 24.95% over the forecast period.

Q3. What is the size of the global wide-bandgap power semiconductor market?
A3. Wide-Bandgap Power Semiconductor Market was valued at US$1,025.326 million in 2020.

Q4. What factors are anticipated to drive the wide-bandgap power semiconductor market growth?
A4. Due to its scientific and technological properties, the WBG power semiconductors have gained popularity in the field of high-performance optoelectronic and electronic devices.

Q5. Which region holds the largest market share in the wide-bandgap power semiconductor market?
A5. Geographically, the Asia-Pacific region is expected to grow at a faster rate during the period owing to the development of semiconductor technology in the region.

1.1. Market Definition
1.2. Market Segmentation

2.1. Research Data
2.2. Assumptions

3.1. Research Highlights

4.1. Market Drivers
4.2. Market Restraints
4.3. Porter’s Five Force Analysis
4.3.1. Bargaining Power of Suppliers
4.3.2. Bargaining Power of Buyers
4.3.3. Threat of New Entrants
4.3.4. Threat of Substitutes
4.3.5. Competitive Rivalry in the Industry
4.4. Industry Value Chain Analysis

5.1. Introduction 
5.2. Silicon Carbide (SiC)
5.3. Gallium Nitride (GaN)
5.4. Diamond
5.5. Gallium Oxide
5.6. Aluminum Nitride (AIN)

6.1. Introduction
6.2. Data Centers
6.3. Renewable Energy Generation
6.4. Hybrid and Electric Vehicles
6.5. Motor Drives

7.1. Introduction
7.2. North America
7.2.1. United States
7.2.2. Canada
7.2.3. Mexico
7.3. South America
7.3.1. Brazil
7.3.2. Argentina
7.3.3. Others
7.4. Europe
7.4.1. Germany
7.4.2. France
7.4.3. United Kingdom 
7.4.4. Italy
7.4.5. Spain 
7.4.6. Others
7.5. Middle East and Africa
7.5.1. Saudi Arabia
7.5.2. UAE
7.5.3. Israel
7.5.4. Others
7.6. Asia Pacific
7.6.1. China
7.6.2. Australia
7.6.3. Japan
7.6.4. South Korea
7.6.5. India
7.6.6. Thailand
7.6.7. Taiwan
7.6.8. Indonesia
7.6.9. Others

8.1. Major Players and Strategy Analysis
8.2. Emerging Players and Market Lucrative
8.3. Mergers, Acquisition, Agreements, and Collaborations
8.4. Vendor Competitiveness Matrix

9.2. Cree, Inc.
9.3. STMicroelectronics
9.4. Infineon Technologies AG
9.5. Mitsubishi Electric Corporation
9.7. Texas Instruments
9.8. Maxim Integrated
9.9. Analog Devices, Inc.


Cree, Inc.


Infineon Technologies AG

Mitsubishi Electric Corporation


Texas Instruments

Maxim Integrated

Analog Devices, Inc.



Explore Custom Options available with this study:

  •  Request customization
  •  Buy sections of the study
  •  Buy country specific report
  •  Request excel, Historical data
  •  Subscription inquiry
  •  Request special pricing

Our Value Proposition

Analyst Support

All our studies come with 2 months of analyst support.


We are in compliance with the global privacy laws.

Connect With Us