Global Gallium Nitride Device Market - Forecasts From 2019 To 2024

Description

GaN or Gallium Nitride is a material which is used in the development of semiconductor power devices, LEDs or light emitting diodes and RF components. This material has a high sensitivity towards ionizing radiation which makes it suitable for solar cell arrays for satellites. The Gallium Nitride devices have dynamic electrical and chemical properties which make them appropriate to be used for various switching devices. The gallium nitride devices are also used as violet laser diodes to read blue-ray discs. Moreover, they are widely used in mobile display, television, projectors, laptop and notebook display as LEDs. They are also used in automobiles in lights, indoor & outdoor lighting, and pulse-powered lasers. Furthermore, they have proven to be effective power devices and are available as GaN HEMTs or High Electron Mobility Transistors, GaN MOSFET or Metal-Oxide-Semiconductor Field-Effect Transistor and GaN MESFET or Metal–Semiconductor Field-Effect Transistor. The GaN based power devices have high efficiency and high voltage operation. Furthermore, the GaN devices or Gallium Nitride devices have also been advocated to be used in nanoscale electrical applications, optoelectronics and biochemical-sensing applications. Apart from this, the gallium nitride devices find their extensive application in industrial, consumer and enterprise applications as well as defence, aerospace and information and communication technology sectors owing to their enhanced performance attributes. Hence expansion of end-use sectors such as automotive, consumer electronics, defence, and industrial among others will positively impact the market growth of gallium nitride devices across the globe. Regionally, the North American market is expected to drive the global growth on account of increasing expenditure on defense & aerospace industry in research & development. Moreover, the market of Asia Pacific is also estimated to drive the global growth on account of the enhanced need for efficient and high-performance RF components and growing demand for the efficient LEDs and electric vehicle production in the region.

Research Methodology

Firstly, the report provides a brief introduction of the market and deals with detailed research methodology for calculating market size and forecasts, secondary data sources used and the primary inputs which were taken for data validation. This section also outlines various segmentations which have been covered as part of the report.

Market Dynamics

Next, the section provides comprehensive market dynamics through an overview section along with growth drivers, challenges, and opportunities which exist in the current market. This section of the report also provides supplier and industry outlook as a whole; key industry, global and regional regulations which are determining the market growth and a brief technological aspect of Gallium Nitride. Complete industry analysis has also been covered by Porter’s five forces model as a part of this report section.

Segmentation

Thirdly, Gallium Nitride Market has been segmented on the basis of wafer size, type of device, application, industry and geography as follows:

By Wafer Size

2 inch

4 inch

6 inch

More than 6 inch

By Type of Device

Power Semiconductor Device

RF Semiconductor Device

Opto-Semiconductor Device

By Application

Radio Frequency

Power Drives

Lighting and Laser

Light Detection and Ranging

By Industry

Industrial

Telecommunications

Renewable

Automotive

Defence

Others

By Geography

North America

U.S.

Canada

Mexico

Others

South America

Brazil

Argentina

Others

Europe

UK

Germany

France

Italy

Others

Middle East and Africa

Saudi Arabia

UAE

Israel

Others

Asia-Pacific

Japan

China

India

Australia

South Korea

Others

Market Players

Finally, competitive intelligence section deals with major players in the market, their market shares, growth strategies, products, financials, and recent investments among others. Key industry players profiled as part of this section are Texas Instruments, Incorporated, Infineon Technologies AG, and Sumitomo Electric Industries, Ltd among others.