GaN or Gallium Nitride is a material which is used in the development of semiconductor power devices, LEDs or light emitting diodes and RF components. This material has a high sensitivity towards ionizing radiation which makes it suitable for solar cell arrays for satellites. The Gallium Nitride devices have dynamic electrical and chemical properties which make them appropriate to be used for various switching devices. The gallium nitride devices are also used as violet laser diodes to read blue-ray discs. Moreover, they are widely used in mobile display, television, projectors, laptop and notebook display as LEDs. They are also used in automobiles in lights, indoor & outdoor lighting, and pulse-powered lasers. Furthermore, they have proven to be effective power devices and are available as GaN HEMTs or High Electron Mobility Transistors, GaN MOSFET or Metal-Oxide-Semiconductor Field-Effect Transistor and GaN MESFET or Metal–Semiconductor Field-Effect Transistor. The GaN based power devices have high efficiency and high voltage operation. Furthermore, the GaN devices or Gallium Nitride devices have also been advocated to be used in nanoscale electrical applications, optoelectronics and biochemical-sensing applications. Apart from this, the gallium nitride devices find their extensive application in industrial, consumer and enterprise applications as well as defence, aerospace and information and communication technology sectors owing to their enhanced performance attributes. Hence expansion of end-use sectors such as automotive, consumer electronics, defence, and industrial among others will positively impact the market growth of gallium nitride devices across the globe. Regionally, the North American market is expected to drive the global growth on account of increasing expenditure on defense & aerospace industry in research & development. Moreover, the market of Asia Pacific is also estimated to drive the global growth on account of the enhanced need for efficient and high-performance RF components and growing demand for the efficient LEDs and electric vehicle production in the region.
Research Methodology
Firstly, the report provides a brief introduction of the market and deals with detailed research methodology for calculating market size and forecasts, secondary data sources used and the primary inputs which were taken for data validation. This section also outlines various segmentations which have been covered as part of the report.
Market Dynamics
Next, the section provides comprehensive market dynamics through an overview section along with growth drivers, challenges, and opportunities which exist in the current market. This section of the report also provides supplier and industry outlook as a whole; key industry, global and regional regulations which are determining the market growth and a brief technological aspect of Gallium Nitride. Complete industry analysis has also been covered by Porter’s five forces model as a part of this report section.
Segmentation
Thirdly, Gallium Nitride Market has been segmented on the basis of wafer size, type of device, application, industry and geography as follows:
By Wafer Size
2 inch
4 inch
6 inch
More than 6 inch
By Type of Device
Power Semiconductor Device
RF Semiconductor Device
Opto-Semiconductor Device
By Application
Radio Frequency
Power Drives
Lighting and Laser
Light Detection and Ranging
By Industry
Industrial
Telecommunications
Renewable
Automotive
Defence
Others
By Geography
North America
U.S.
Canada
Mexico
Others
South America
Brazil
Argentina
Others
Europe
UK
Germany
France
Italy
Others
Middle East and Africa
Saudi Arabia
UAE
Israel
Others
Asia-Pacific
Japan
China
India
Australia
South Korea
Others
Market Players
Finally, competitive intelligence section deals with major players in the market, their market shares, growth strategies, products, financials, and recent investments among others. Key industry players profiled as part of this section are Texas Instruments, Incorporated, Infineon Technologies AG, and Sumitomo Electric Industries, Ltd among others.
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