The 5G RF gallium nitride market is valued at USD 107.348 million in 2025.
Gallium nitride (GaN) is a semiconductor material characterized by its wide bandgap and rigid hexagonal crystal structure. The broader bandgap of gallium nitride is crucial as it determines a material's capacity to withstand electric fields. GaN's wide bandgap facilitates the creation of semiconductors featuring extremely short or narrow depletion regions, resulting in device structures with remarkably high carrier density. The reduced size of transistors and shorter current paths achieved through this allow for ultra-low resistance and capacitance, leading to speeds that can be up to 100 times faster. In essence, GaN technology surpasses conventional silicon by handling larger electric fields within a significantly smaller form factor, resulting in significantly faster switching. Moreover, GaN technologies exhibit the capability to operate at higher maximum temperatures compared to their silicon-based counterparts.
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Positive Environmental Impact
Navitas Semiconductor had projected that a global upgrade from silicon (Si) to Gallium Nitride (GaN) in data centers would result in a reduction of energy loss by 30-40%. This would equate to saving more than 100 terawatt-hours (TWhr) and 125 million tons of CO2 emissions by the year 2030. The deployment of GaN thus represented a further stride towards achieving carbon 'Net-Zero' objectives for the data center industry. Gallium Nitride (GaN) emerged as the preferred technology in scenarios where high-frequency performance played a crucial role. This included applications like base stations for 5G and 6G, as well as radar and high-frequency power conversion applications, such as adapters, microinverters, and power supplies. The competition between GaN and SiC had just begun, and while the outcome remained uncertain, examining its application by application and market by market suggested positive implications for the Earth's environment. This technological shift promised to avoid countless billions of tons of greenhouse gases in the years ahead, contributing to a cycle of replacement and rejuvenation that continued to progress inexorably.
Favourable Government Regulations
India accomplished its short-term and long-term objectives outlined in the Panchamrit action plan. This includes achieving a non-fossil fuel energy capacity of 500 gigawatts by 2030, meeting at least 50% of its energy needs through renewable sources by 2030, reducing CO2 emissions by 1 billion tons by 2030, lowering carbon intensity to below 45% by 2030, and laying the groundwork for attaining a Net-Zero emission target by 2070, as mentioned on 28th September 2023.
In December 2021, researchers in India successfully created a high-performance industry-standard model for Aluminum Gallium Nitride (AlGaN/GaN) High Electron Mobility Transistors (HEMTs). The model features straightforward design procedures, making it applicable for the production of high-power Radio Frequency (RF) circuits due to its elevated breakdown voltage. These RF circuits, including amplifiers and switches, are crucial for wireless transmission and find utility in space and defence applications. The AlGaN/GaN HEMTs can also enhance the power level of solid-state microwave circuits by a factor of five to ten, leading to a notable reduction in overall chip size and cost. Consequently, the developed standard holds the potential to significantly decrease the development cost of circuits and devices used for transmitting high-frequency signals.
In March 2022, Rajeev Chandrasekhar, the Union Minister of State for Electronics & Information Technology and Skill Development & Entrepreneurship, toured the Gallium Nitride Ecosystem Enabling Centre and Incubator (GEECI) facility located at the esteemed Indian Institute of Science (IISc) in Bengaluru. This facility, a collaborative effort between the Ministry of Electronics and Information Technology and IISc Bengaluru, is focused on establishing a GaN-based Development Line Foundry facility. Its primary emphasis is on RF and power applications, including strategic applications.
In May 2022, STMicroelectronics and MACOM achieved technological and performance milestones with prototypes of RF Gallium-Nitride-on-Silicon. This technology, RF GaN-on-Silicon, holds great promise for 5G and 6G infrastructure. The traditional RF power technology, laterally diffused metal-oxide-semiconductor (LDMOS), was dominant in early-generation RF power amplifiers (PAs). GaN presents superior RF characteristics and notably higher output power compared to LDMOS in these RF PAs. Additionally, GaN can be manufactured on either silicon or silicon-carbide (SiC) wafers. RF GaN-on-SiC may incur higher costs due to competition for SiC wafers from high-power applications and its non-mainstream semiconductor processing.
Europe is expected to show growth in this market. In December 2022, NexGen introduced the inaugural GaN-on-GaN power semiconductor technology, branded as Vertical GaN™ by the California-based company. Simultaneously, in March 2023, SweGaN, a Swedish firm, unveiled intentions to establish a high-volume production facility for gallium nitride on silicon carbide (GaN-on-SiC) wafers at the Innovative Materials Arena (IMA), a technological hub in Linköping, to address the rising demand. Subsequently, in October 2023, GaN Systems joined forces with Infineon. The company, headquartered in Ottawa, contributes an extensive array of gallium nitride (GaN)-based power conversion solutions and expertise in cutting-edge applications to Infineon's portfolio.
A report by CSIS, published on 18 July 2023, shows that China dominates Gallium production. China's influence over gallium supply chains developed indirectly, mainly because gallium is predominantly obtained as a byproduct of bauxite processing, the primary ore used for aluminum production. Consequently, gallium production is closely linked to the dynamics of the global aluminum market. China witnessed a tenfold surge in aluminum production, soaring from 4.2 million tons to 40.2 million tons, between 2000 and 2022. Presently, China is responsible for around 59 percent of the world's aluminum supply, enabling it to establish a significant share in global gallium production. This dominant position was further solidified by intentional government policies, where Beijing mandated its rapidly growing aluminum manufacturers to incorporate the capability to extract gallium. From 2005 to 2015 alone, China's output of low-purity gallium skyrocketed from 22 metric tons to 444 metric tons.
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COMPANY NAME |
PRODUCT NAME |
DESCRIPTION |
|
AIXTRON SE |
G10-GaN |
The G10-GaN, along with its innovative features, was a new platform that provided best-in-class performance, a completely redesigned compact structure, and the overall lowest cost per wafer. |
|
Navitas Semiconductor |
GaNFast™ |
The increasing need for higher capacity batteries and faster charging is propelling chargers towards higher power, improved efficiency, and more compact designs. GaNFast power ICs are transforming fast – and ultra-fast – charging for various mobile devices, such as phones, tablets, and laptops, by delivering a charging speed that is three times faster, all within half the size and weight. |
|
SweGaN |
AIGan Back Barrier |
The addition of an AlGaN back-barrier to GaN epi-wafer high electron mobility transistor structures enhance electron confinement, a critical factor for telecommunication devices operating at frequencies surpassing 40 GHz. This enhancement further elevates the performance of the already highly competitive QuanFINE structure that we offer to our customers, pushing the boundaries of telecommunication device capabilities even higher. |
| Report Metric | Details |
|---|---|
| Study Period | 2021 to 2031 |
| Historical Data | 2021 to 2024 |
| Base Year | 2025 |
| Forecast Period | 2026 – 2031 |
| Report Metric | Details |
| Market Size Value in 2025 | US$107.348 million |
| Growth Rate | CAGR during the forecast period |
| Base Year | 2024 |
| Forecast Period | 2025 – 2030 |
| Forecast Unit (Value) | USD Million |
| Segments Covered | Technology, Frequency, and Geography |
| Regions Covered | North America, South America, Europe, Middle East and Africa, Asia Pacific |
| Companies Covered | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC., WOLFSPEED, INC., Qorvo, Inc, NXP Semiconductors, Finwave Semiconductor, Inc. |
| Customization Scope | Free report customization with purchase |
5G RF Gallium Nitride (GaN) Market Segmentation:
The 5G RF Gallium Nitride (GaN) market has been analyzed through the following segments: