Gallium Nitride Semiconductor Devices Market Size, Share, Opportunities, And Trends By Product( GaN Radio Frequency Devices, Opto-semiconductors, Power Semiconductors), By Component (Transistor, Diode, Rectifier, Power IC, Others), By Wafer Size (2-inch, 4-inch, 6-inch, 8-inch), By End-User (Automotive, Consumer Electronics, Defense & Aerospace, Healthcare, Industrial & Power, Information & Communication Technology, Others), And By Geography - Forecasts From 2024 To 2029

  • Published : Jan 2024
  • Report Code : KSI061616462
  • Pages : 144

The gallium nitride semiconductor devices market is projected to show steady growth during the forecast period.

Gallium Nitride (GaN) semiconductor devices are a type of electronic component in which the core material is Gallium Nitride. GaN is a semiconductor with a wide bandgap that has excellent properties such as high breakdown voltage, high electron mobility, and high thermal conductivity. GaN semiconductor devices have a wide range of end-users such as automotive, consumer electronics, defence & aerospace, healthcare, industrial & power, and information & communication technology. Increasing automotive production and favourable investment in the aerospace & defence industry contributed to the gallium nitride semiconductor device market growth.

Market Drivers

  • Increasing automotive production bolsters the gallium nitride semiconductor devices market growth.

Gallium nitride semiconductor devices are extensively employed in automotive applications due to their ability to handle high power density and high-frequency operations. These devices are used in infotainment Systems, lighting applications, and advanced driver assistance systems (ADAS), leading to enhanced performance, reduced heat dissipation, and increased energy efficiency. The increasing automotive production is a major driving force behind the gallium nitride semiconductor devices market growth. For instance, as per the European Automobile Manufacturers' Association, in 2022, 85.4 million motor vehicles were produced worldwide, a 5.7% hike over the year 2021 in which China accounts for a major portion and produced 27,222,000 units in 2022.

  • Favorable investment in the aerospace sector contributed to the gallium nitride semiconductor device market growth.

Gallium Nitride devices are ideal for defence and aerospace applications due to their superior power handling, frequency operation, and reliability. Continual investments in aerospace and defence infrastructure development are increasing demand for gallium nitride semiconductor devices in such industry which contributed to the expansion of gallium nitride semiconductor device market growth. For instance, according to the Press Information Bureau, the Airports Authority of India (AAI) started the development of new and existing airports, with an estimated capital expenditure of Rs. 25,000 crores over the next five years which includes the development of Airport Navigation Services (ANS) infrastructure, control towers and technical blocks. Additionally, Rs. 36,000 crores were allocated for investment in the development of new Greenfield airports across the country through the PPP model.

  • Advancements in gallium nitride semiconductor technology pushed the gallium nitride semiconductor device market upward.

The gallium nitride semiconductor devices market is constantly evolving, with advancements in power handling, high-frequency operation, and energy efficiency. Hence the development in wideband and multiband communication has pushed the gallium nitride semiconductor devices market. Therefore, in January 2023, NXP announced the launch of MMRF5018HS a new wideband RF GaN transistor for aerospace and defence communications.

Asia Pacific is expected to grow significantly

Asia Pacific is projected to account for a major share of the gallium nitride semiconductor devices market due to the increasing automotive production and favorable investments in the aerospace & defence industry. For instance, according to the International Organization of Motor Vehicle Manufacturers, 27,020,615 units were produced in China, 54,56,857 units were produced in India 37,57,049 units in South Korea in 2022, an increase of 24% (India), 3% (China), 9% (South Korea) over the year 2021. Additionally, in the Union Budget 2023-2024, the funding allocations for modernization and infrastructure development of the Defense sector have been increased to INR 1,62,600 Crores, illustrating a 6.7% increase over FY 2022-23.

Market Restraints

  • Manufacturing complexity and high cost will restrain the gallium nitride semiconductor device market growth.

Gallium nitride semiconductor fabrication necessitates specialized techniques and equipment, which can be more complex and costly than silicon-based processes hence affecting the prices of GaN semiconductor devices. This may limit the adoption of GaN-based semiconductors in numerous sectors which may hinder the market growth.

Market Development

  • October 2023- Infineon Technologies AG announced the completion of its acquisition of GaN Systems Inc. The acquisition of GaN Systems substantially accelerates the GaN roadmap and bolsters Infineon's leadership in power systems by mastery of all relevant power semiconductor technologies.
  • April 2023- EPC announced the release of two new radiation-hardened GaN FETs. The EPC7020 and EPC7003 provide power conversion solutions at 100 and 200 volts to address a wide range of critical spaceborne and other high-reliability applications.
  • June 2022- GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, launched the GS-065-018-2-L transistor to its industry-leading portfolio of GaN power transistors. It adds to the company's portfolio of high-performance, low-cost transistors to increase robustness and thermal performance, and an 850V VDS (transient) ranking.

Company Products

  • GS61004B- GaN Systems offers the GS61004B, an enhancement mode GaN-on-Silicon power transistor. It is a bottom-cooled transistor with very low junction-to-case thermal resistance for high-power applications that require high reliability and features with a very high switching frequency of> 10 MHz and a small 4.6 x 4.4 mm2 PCB footprint. It is widely used in numerous applications such as solar power, smart home, class D audio amplifiers, and enterprise and networking power.
  • IGOT60R042D1- The IGOT60R042D1 is a GaN transistor provided by Infineon Technologies AG which allows more compact topologies and improved effectiveness at higher frequency operation. It has been certified by an extensive GaN-specific qualification process that exceeds industry standards. It features ultrafast switching, a VDS max of 600 V, and is capable of reverse conduction.
  • RF Power GaN Transistor- NXP RF power GaN transistor is 56 W symmetrical Doherty which is designed for cellular base station applications that require very wide immediate bandwidth capability enhancing the frequency range of 1805 to 2200 MHz. It has high terminal impedances for optimal broadband performance as well as improved linearized mistake vector magnitude with the next-generation signal.


  • By Product
    • GaN Radio Frequency Devices
    • Opto-semiconductors
    • Power Semiconductors
  • By Component
    • Transistor
    • Diode
    • Rectifier
    • Power IC
    • Others
  • By Wafer Size
    • 2-inch
    • 4-inch
    • 6-inch
    • 8-inch
  • By End-User
    • Automotive
    • Consumer Electronics
    • Defense & Aerospace
    • Healthcare
    • Industrial & Power
    • Information & Communication Technology
    • Others
  • By Geography
    • North America
      • USA
      • Canada
      • Mexico
    • South America
      • Brazil
      • Argentina
      • Others
    • Europe
      • Germany
      • UK
      • France
      • Spain
      • Others
    • Middle East and Africa
      • Saudi Arabia
      • UAE
      • Others
    • Asia Pacific
      • China
      • Japan
      • South Korea
      • India
      • Indonesia
      • Others


1.1. Market Overview

1.2. Market Definition

1.3. Scope of the Study

1.4. Market Segmentation

1.5. Currency

1.6. Assumptions

1.7. Base, and Forecast Years Timeline


2.1. Research Data

2.2. Research Process


3.1. Research Highlights


4.1. Market Drivers

4.2. Market Restraints

4.3. Market Opportunities

4.4. Porter’s Five Force Analysis

4.4.1. Bargaining Power of Suppliers

4.4.2. Bargaining Power of Buyers

4.4.3. Threat of New Entrants

4.4.4. Threat of Substitutes

4.4.5. Competitive Rivalry in the Industry

4.5. Industry Value Chain Analysis


5.1. Introduction

5.2. GaN Radio Frequency Devices

5.3. Opto-semiconductors

5.4. Power Semiconductors


6.1. Introduction

6.2. Transistor

6.3. Diode

6.4. Rectifier

6.5. Power IC

6.6. Others


7.1. Introduction

7.2. 2-inch

7.3. 4-inch

7.4. 6-inch

7.5. 8-inch


8.1. Introduction

8.2. Automotive

8.3. Consumer Electronics

8.4. Defense & Aerospace

8.5. Healthcare

8.6. Industrial & Power

8.7. Information & Communication Technology

8.8. Others


9.1. Introduction

9.2. North America

9.2.1. USA

9.2.2. Canada

9.2.3. Mexico

9.3. South America

9.3.1.  Brazil

9.3.2. Argentina

9.3.3. Others

9.4. Europe

9.4.1. Germany

9.4.2. UK

9.4.3. France

9.4.4. Spain

9.4.5. Others

9.5. Middle East and Africa

9.5.1. Saudi Arabia

9.5.2. UAE

9.5.3. Others

9.6. Asia Pacific

9.6.1. China

9.6.2. Japan

9.6.3. South Korea

9.6.4. India

9.6.5. Indonesia

9.6.6. Others


10.1. Major Players and Strategy Analysis

10.2. Market Share Analysis

10.3. Mergers, Acquisitions, Agreements, and Collaborations


11.1. Efficient Power Conversion Corporation

11.2. Fujitsu Ltd.

11.3. GaN Systems

11.4. Infineon Technologies AG

11.5. NexgenPowerSystems

11.6. NXP Semiconductor

11.7. Qorvo, Inc.

Efficient Power Conversion Corporation

Fujitsu Ltd.

GaN Systems

Infineon Technologies AG


NXP Semiconductor

Qorvo, Inc.