Gallium Nitride Semiconductor Devices Market Size, Share, Opportunities, And Trends By Product (GaN Radio Frequency Devices, Opto-semiconductors, Power Semiconductors), By Component (Transistor, Diode, Rectifier, Power IC, Others), By Wafer Size (2-inch, 4-inch, 6-inch, 8-inch), By End-User (Automotive, Consumer Electronics, Defense & Aerospace, Healthcare, Industrial & Power, Information & Communication Technology, Others), And By Geography - Forecasts From 2025 To 2030

The gallium nitride semiconductor devices market is expected to grow at a CAGR of 18.29%, reaching a market size of US$18.158 billion in 2030 from US$7.839 billion in 2025.

Gallium Nitride (GaN) semiconductor devices are a type of electronic component in which the core material is Gallium Nitride. It is a semiconductor with a wide bandgap with excellent properties, such as high breakdown voltage, electron mobility, and thermal conductivity. GaN semiconductor devices have a wide range of end-users, such as automotive, consumer electronics, defence & aerospace, healthcare, industrial & power, and information & communication technology. Increasing automotive production and favourable investment in the aerospace & defence industry contributed to the gallium nitride semiconductor device market growth.

Gallium Nitride (GaN) Semiconductor Device Market Drivers

• Increasing automotive production bolsters the gallium nitride semiconductor devices market growth.

GaN semiconductor devices are extensively employed in automotive applications due to their ability to handle high power density and high-frequency operations. These devices are used in infotainment systems, lighting applications, and advanced driver assistance systems (ADAS), leading to enhanced performance, reduced heat dissipation, and increased energy efficiency. The rising automotive production is a major driving force behind the gallium nitride semiconductor devices market growth. For instance, according to the European Automobile Manufacturers' Association, 2022 85.4 million motor vehicles were produced worldwide, a 5.7% hike over the year 2021, in which China accounts for a major portion and produced 27,222,000 units in 2022.

• Favorable investment in the aerospace sector contributed to the gallium nitride semiconductor device market growth.

Gallium Nitride devices are ideal for defence and aerospace applications due to their superior power handling, frequency operation, and reliability. Continual investments in aerospace and defence infrastructure development are increasing demand for gallium nitride semiconductor devices in such industries, which contributed to the gallium nitride semiconductor device market growth. For instance, according to the Press Information Bureau, the Airports Authority of India (AAI) started the development of new and existing airports, with an estimated capital expenditure of Rs. 25,000 crores over the next five years, which includes the development of Airport Navigation Services (ANS) infrastructure, control towers and technical blocks. Additionally, Rs. 36,000 crores were allocated for investment in the development of new Greenfield airports across the country through the PPP model.

• Advancements in gallium nitride semiconductor technology pushed the gallium nitride semiconductor device market upward.

The gallium nitride semiconductor devices market is constantly evolving, with advancements in power handling, high-frequency operation, and energy efficiency. Hence, the development of wideband and multiband communication has pushed the market. In January 2023, NXP announced the launch of MMRF5018HS, a new wideband RF GaN transistor for aerospace and defence communications.

Gallium Nitride (GaN) Semiconductor Device Market – Geographical Outlook

• Asia Pacific is expected to have significant market growth

Asia Pacific is projected to account for a major share of the gallium nitride semiconductor devices market due to the increasing automotive production and favorable investments in the aerospace & defence industry. For instance, according to the International Organization of Motor Vehicle Manufacturers, 2,70,20,615 units were produced in China, 54,56,857 units were produced in India, and 37,57,049 units in South Korea in 2022. This marks an increase of 24% (India), 3% (China), 9% (South Korea) over the year 2021. Additionally, in the Union Budget 2023-2024, the funding allocations for modernization and infrastructure development of the Defense sector have been increased to INR 1,62,600 Crores, illustrating a 6.7% increase over FY 2022-23.

Gallium Nitride (GaN) Semiconductor Device Market Restraints

• Manufacturing complexity and high cost will restrain the gallium nitride semiconductor device market growth.

Gallium nitride semiconductor fabrication necessitates specialized techniques and equipment, which can be more complex and costly than silicon-based processes. This can affect the prices of GaN semiconductor devices. This may limit the adoption of GaN-based semiconductors in numerous sectors, hindering market growth.

Gallium Nitride (GaN) Semiconductor Device Key Market Development

• November 2024: Infineon Technologies AG has launched its new generation of CoolGaN Transistors 650 V G5, offering efficiency and power density enhancement for applications in consumer electronics and renewable energy systems. These GaN discretes offer up to 50% lower energy stored in output capacitance and 60% reduced gate charge, resulting in 20-60% less power loss compared to traditional silicon solutions. Designed as drop-in replacements for the previous CoolGaN 600 V G1, they enable quick redesigns and will be showcased at electronica 2024 in Munich.
• September 2024: India and the United States are to set up the world's first multi-material semiconductor fabrication unit in Jewar, Uttar Pradesh. The facility, called Bharat Semi Fab, will focus on manufacturing infrared, gallium nitride, and silicon carbide semiconductors. The development bears crucial fruits in the quest for India to become an independent chipmaker and strengthen its technological prowess.
• March 2024: Infineon Technologies AG concluded its acquisition of GaN Systems for $830 million to strengthen its position in the power semiconductor Infineon now be able to tap the extensive portfolio of gallium nitride-based solutions along with the expertise of GaN Systems. With this integration, Infineon now has a team of 450 GaN experts and over 350 GaN patents, thus considerably accelerating its roadmap for energy-efficient technologies to be used in applications like electric vehicles, data centers, and renewable energy solutions.
• January 2024: Renesas Electronics acquired Transphorm, a leading company in gallium nitride technology, for $339 million. The move is intended to strengthen the wide bandgap semiconductor portfolio at Renesas, which sees growing demands in electric vehicles, data centers, AI, and renewable energy. The company planned to launch 15 new GaN-based reference designs using Transphorm's automotive-qualified technology following the acquisition. 

Gallium Nitride (GaN) Semiconductor Device Market Players and Products

• GS61004B- GaN Systems offers the GS61004B, an enhancement mode GaN-on-Silicon power transistor. It is a bottom-cooled transistor with very low junction-to-case thermal resistance for high-power applications that require high reliability. It features a very high switching frequency of> 10 MHz and a small 4.6 x 4.4 mm2 PCB footprint. It is widely used in numerous applications such as solar power, smart homes, class D audio amplifiers, and enterprise and networking power.
• IGOT60R042D1- The IGOT60R042D1 is a GaN transistor provided by Infineon Technologies AG that allows for more compact topologies and improved effectiveness at higher frequency operation. It has been certified by an extensive GaN-specific qualification process that exceeds industry standards. It features ultrafast switching, a VDS max of 600 V, and is capable of reverse conduction.
• RF Power GaN Transistor - The NXP RF power GaN transistor is a 56 W symmetrical Doherty designed for cellular base station applications that require a very wide immediate bandwidth capability, enhancing the frequency range of 1805 to 2200 MHz. It has high terminal impedances for optimal broadband performance and improved linearized mistake vector magnitude with the next-generation signal.

The Gallium Nitride (GaN) Semiconductor Device Market is segmented and analyzed as follows:

• By Product
  • GaN Radio Frequency Devices
  • Opto-semiconductors
  • Power Semiconductors
• By Component
  • Transistor
  • Diode
  • Rectifier
  • Power IC
  • Others
• By Wafer Size
  • 2-inch
  • 4-inch
  • 6-inch
  • 8-inch
• By End-User
  • Automotive
  • Consumer Electronics
  • Defense & Aerospace
  • Healthcare
  • Industrial & Power
  • Information & Communication Technology
  • Others
• By Geography
  • North America
    • USA
    • Canada
    • Mexico
  • South America
    • Brazil
    • Argentina
    • Others
  • Europe
    • Germany
    • UK
    • France
    • Spain
    • Others
  • Middle East and Africa
    • Saudi Arabia
    • UAE
    • Others
  • Asia Pacific
    • China
    • Japan
    • South Korea
    • India
    • Indonesia
    • Others

1. INTRODUCTION

1.1. Market Overview

1.2. Market Definition

1.3. Scope of the Study

1.4. Market Segmentation

1.5. Currency

1.6. Assumptions

1.7. Base, and Forecast Years Timeline

2. RESEARCH METHODOLOGY  

2.1. Research Data

2.2. Research Process

3. EXECUTIVE SUMMARY

3.1. Research Highlights

4. MARKET DYNAMICS

4.1. Market Drivers

4.2. Market Restraints

4.3. Market Opportunities

4.4. Porter’s Five Force Analysis

4.4.1. Bargaining Power of Suppliers

4.4.2. Bargaining Power of Buyers

4.4.3. Threat of New Entrants

4.4.4. Threat of Substitutes

4.4.5. Competitive Rivalry in the Industry

4.5. Industry Value Chain Analysis

5. GALLIUM NITRIDE SEMICONDUCTOR DEVICES MARKET BY PRODUCT

5.1. Introduction

5.2. GaN Radio Frequency Devices

5.3. Opto-semiconductors

5.4. Power Semiconductors

6. GALLIUM NITRIDE SEMICONDUCTOR DEVICES MARKET BY COMPONENT

6.1. Introduction

6.2. Transistor

6.3. Diode

6.4. Rectifier

6.5. Power IC

6.6. Others

7. GALLIUM NITRIDE SEMICONDUCTOR DEVICES MARKET BY WAFER SIZE

7.1. Introduction

7.2. 2-inch

7.3. 4-inch

7.4. 6-inch

7.5. 8-inch

8. GALLIUM NITRIDE SEMICONDUCTOR DEVICES MARKET BY END-USER

8.1. Introduction

8.2. Automotive

8.3. Consumer Electronics

8.4. Defense & Aerospace

8.5. Healthcare

8.6. Industrial & Power

8.7. Information & Communication Technology

8.8. Others

9. GALLIUM NITRIDE SEMICONDUCTOR DEVICES MARKET BY GEOGRAPHY

9.1. Introduction

9.2. North America

9.2.1. USA

9.2.2. Canada

9.2.3. Mexico

9.3. South America

9.3.1.  Brazil

9.3.2. Argentina

9.3.3. Others

9.4. Europe

9.4.1. Germany

9.4.2. UK

9.4.3. France

9.4.4. Spain

9.4.5. Others

9.5. Middle East and Africa

9.5.1. Saudi Arabia

9.5.2. UAE

9.5.3. Others

9.6. Asia Pacific

9.6.1. China

9.6.2. Japan

9.6.3. South Korea

9.6.4. India

9.6.5. Indonesia

9.6.6. Others

10. COMPETITIVE ENVIRONMENT AND ANALYSIS

10.1. Major Players and Strategy Analysis

10.2. Market Share Analysis

10.3. Mergers, Acquisitions, Agreements, and Collaborations

11. COMPANY PROFILES

11.1. Efficient Power Conversion Corporation

11.2. Fujitsu Ltd.

11.3. Texas Instruments Incorporated

11.4. Infineon Technologies AG

11.5. NXP Semiconductors

11.6. Qorvo, Inc.

 11.7. MACOM

11.8. TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

11.9. Microchip Technology Inc.

 

11.10. STMicroelectronics

Efficient Power Conversion Corporation

Fujitsu Ltd.

Texas Instruments Incorporated

Infineon Technologies AG

NXP Semiconductors

Qorvo, Inc.

MACOM

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Microchip Technology Inc.

STMicroelectronics